AI Article Synopsis
- Organic semiconductors (OSCs) are gaining popularity for applications in electronics like transistors due to their ability to transport carriers efficiently.
- Researchers have recently developed p-type OSC single crystals that work well with printing technology, enabling high-speed field-effect transistors (FETs), while advancements in n-type OSCs are being explored for complementary circuits.
- A specific n-type OSC called PhC -BQQDI was studied for its electron transport properties and demonstrated high-speed performance in single crystal FETs, achieving a cutoff frequency of 4.3 MHz.
Article Abstract
Organic semiconductors (OSCs) have attracted growing attention for optoelectronic applications such as field-effect transistors (FETs), and coherent (or band-like) carrier transport properties in OSC single crystals (SCs) have been of interest as they can lead to high carrier mobilities. Recently, such p-type OSC SCs compatible with a printing technology have been used to achieve high-speed FETs; therefore, developments of n-type counterparts may be promising for realizing high-speed complementary organic circuits. Herein, coherent electron transport properties in a printed SC of a state-of-the-art, air-stable n-type OSC, PhC -BQQDI, by means of variable-temperature gated Hall effect measurements and X-ray single-crystal diffraction analyses in conjunction with band structure calculations, are reported. Furthermore, the SC FET is tested for high-speed operations, which obtains a cutoff frequency of 4.3 MHz at an operation voltage of 20 V in air. Thus, PhC -BQQDI is shown as a new candidate for practical applications of SC-based, organic complementary devices.
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| http://dx.doi.org/10.1002/adma.202003245 | DOI Listing |
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