Whilst often discussed as non-trivial phases of low-dimensional ferroelectrics, modulated polar phases such as the dipolar maze and the nano-bubble state have been appraised as essentially distinct. Here we emphasize their topological nature and show that these self-patterned polar states, but also additional mesophases such as the disconnected labyrinthine phase and the mixed bimeron-skyrmion phase, can be fathomed in their plurality through the unifying canvas of phase separation kinetics. Under compressive strain, varying the control parameter, i.e., the external electric field, conditions the nonequilibrium self-assembly of domains, and bridges nucleation and spinodal decomposition via the sequential onset of topological transitions. The evolutive topology of these polar textures is driven by the (re)combination of the elementary topological defects, merons and antimerons, into a plethora of composite topological defects such as the fourfold junctions, the bimeron and the target skyrmion. Moreover, we demonstrate that these manipulable defects are stable at room temperature and feature enhanced functionalities, appealing for devising future topological-based nanoelectronics.
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http://dx.doi.org/10.1038/s41467-020-19519-w | DOI Listing |
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January 2025
Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China.
Ferroelectric materials, celebrated for their switchable polarization, have undergone significant evolution since their early discovery in Rochelle salt. Initial challenges, including water solubility and brittleness, are overcome with the development of perovskite ferroelectrics, which enable the creation of stable, high-quality thin films suitable for semiconductor applications. As the demand for miniaturization in nanoelectronics has increased, research has shifted toward low-dimensional materials.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter, State Key Laboratory of Structure Chemistry, CHINA.
The discovery of ferroelectricity in two-dimensional (2D) semiconductors has opened a new and exciting chapter in next-generation electronics and spintronics due to their lattice-dimensionality-induced unique behaviors and fascinating functionalities brought by spontaneous polarization. The emerging layered halide perovskites with 2D lattices provide a great platform for generating reduced symmetry and low-dimensional ferroelectricity. Herein, inspired by the approach of reduced lattice dimensionality, a series of 2D layered germanium iodide perovskite ferroelectric semiconductors A2CsGe2I7 [where A = PA (propylammonium), BA (butylammonium) and AA (amylammonium)] was firstly developed, which demonstrates remarkable semiconducting features including narrow direct bandgap (~1.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Physics, Pohang University of Science and Technology, 77, Cheongam-ro, Nam-gu, Pohang, 37673, Korea (the Republic of).
Janus materials, a novel class of materials with two faces of different chemical compositions and electronic polarities, offer significant potential for various applications with catalytic reactions, chemical sensing, and optical or electronic responses. A key aspect for such functionalities is face-dependent electronic bipolarity, which is usually limited by the chemical distinction of terminated surfaces and has not been exploited in the semiconducting regime. Here, it is showed that a Janus and Kagome van der Waals (vdW) material NbTeI has ferroelectric-like coherent stacking of the Janus layers and hosts strong electronic bipolar states in the semiconducting regime.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials Science and Engineering, UNSW Sydney, NSW 2052, Australia.
Domain walls are quasi-one-dimensional topological defects in ferroic materials, which can harbor emergent functionalities. In the case of ferroelectric domain wall (FEDW) devices, an exciting frontier has emerged: memristor-based information storage and processing approaches. Memristor solid-state FEDW devices presented thus far, however predominantly utilize a complex network of domain walls to achieve the desired regulation of density and charge state.
View Article and Find Full Text PDFAdv Mater
December 2024
Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China.
HfO-based multi-bit ferroelectric memory combines non-volatility, speed, and energy efficiency, rendering it a promising technology for massive data storage and processing. However, some challenges remain, notably polarization variation, high operation voltage, and poor endurance performance. Here we show Hf ZrO (x = 0.
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