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Initial oxidation of GaAs(100) under near-realistic environments revealed by AP-XPS. | LitMetric
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Initial oxidation of GaAs(100) under near-realistic environments revealed by AP-XPS.

Ryo Toyoshima Shunya Murakami Shinsuke Eguchi Kenta Amemiya Kazuhiko Mase Hiroshi Kondoh

Chem Commun (Camb)

Department of Chemistry, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522, Japan.

Published: November 2020

In situ monitoring of initial oxidation of GaAs surfaces was performed under (near-) realistic oxidizing environments, using ambient-pressure X-ray photoelectron spectroscopy (AP-XPS). The surface chemical states drastically change with time. The oxidation process at the sub-nano-meter-scale exhibits a significantly small activation energy, which can be regarded as a quasi-barrier-less oxidation.

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 Source
http://dx.doi.org/10.1039/d0cc05279eDOI Listing

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