Metal oxides are widely employed in heterogeneous catalysis, but it remains challenging to determine their exact structure and understand the reaction mechanisms at the molecular level due to their structural complexity, in particular for binary oxides. This paper describes the observation of the strong electronic interaction between InO and monoclinic ZrO (m-ZrO) by XPS experiments combined with theoretical studies, which leads to support-dependent methanol selectivity. InO/m-ZrO exhibits methanol selectivity up to 84.6% with a CO conversion of 12.1%. Moreover, at a wide range of temperatures, the methanol yield of InO/m-ZrO is much higher than that of InO/t-ZrO (t-: tetragonal), which is due to the high dispersion of the In-O-In structure over m-ZrO as determined by Raman spectra. The electron transfer from m-ZrO to InO is confirmed by XPS and DFT calculations and improves the electron density of InO, which promotes H dissociation and hydrogenation of formate intermediates to methanol. The concept of the electronic interaction between an oxide and a support provides guidelines to develop hydrogenation catalysts.
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http://dx.doi.org/10.1021/jacs.0c07195 | DOI Listing |
Sensors (Basel)
January 2025
Department of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, UK.
In radio frequency identification (RFID), differences in spectrum policies and tag misreading in different countries are the two main issues that limit its application. To solve these problems, this article proposes a composite right/left-handed transmission line (CRLH-TL)-based reconfigurable antenna for ultra-high frequency near-field and far-field RFID reader applications. The CRLH-TL is achieved using a periodically capacitive gap-loaded parallel plate line.
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January 2025
School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China.
Developing a new type of circularly polarized luminescent active small organic molecule that combines high fluorescence quantum yield and luminescence dissymmetric factor in both solution and solid state is highly challenging but promising. In this context, we designed and synthesized a unique triarylborane-based [2.2]paracyclophane derivative, , in which an electron-accepting [(2-dimesitylboryl)phenyl]ethynyl group and an electron-donating -diphenylamino group are introduced into two different benzene rings of [2.
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January 2025
College of Science, Liaoning Petrochemical University, Fushun 113001, China.
The electronic structure characteristics of bilayer graphyne, bilayer graphdiyne, and bilayer graphtriyne were systematically studied using molecular orbital (MO) analysis, density of states (DOS), and interaction region indicator (IRI) methods. The delocalization characteristics of the out-of-plane and in-plane π electrons (i.e.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Hainan Engineering Research Center of Tropical Ocean Advanced Optoelectronic Functional Materials, Hainan International Joint Research Center of Marine Advanced Photoelectric Functional Materials, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Key Laboratory of Functional Materials and Photoelectrochemistry of Haikou, College of Chemistry and Chemical Engineering, Hainan Normal University, Haikou 571158, China.
The CsPbBr perovskite exhibits strong environmental stability under light, humidity, temperature, and oxygen conditions. However, in all-inorganic perovskite solar cells (PSCs), interface defects between the carbon electrode and CsPbBr limit the carrier separation and transfer rates. We used black phosphorus (BP) nanosheets as the hole transport layer (HTL) to construct an all-inorganic carbon-based CsPbBr perovskite (FTO/c-TiO/m-TiO/CsPbBr/BP/C) solar cell.
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January 2025
Power Solutions Group, Onsemi, Scottsdale, AZ 85250, USA.
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations in the drift region and thus achieving a lower forward voltage drop (VF) and reduced leakage current (IR) while maintaining high breakdown voltage (BV). While the use of trenches to push electric fields away from the mesa surface is a widely employed concept for vertical power devices, a significant gap exists in the analytical modeling of this effect, with most prior studies relying heavily on computationally intensive numerical simulations.
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