In 1976, Leon Chua showed that a thermistor can be modeled as a memristive device. Starting from this statement we designed a circuit that has four circuit elements: a linear passive inductor, a linear passive capacitor, a nonlinear resistor and a thermistor, that is, a nonlinear "locally active" memristor. Thus, the purpose of this work was to use a physical memristor, the thermistor, in a Muthuswamy-Chua chaotic system (circuit) instead of memristor emulators. Such circuit has been modeled by a new three-dimensional autonomous dynamical system exhibiting very particular properties such as the transition from torus breakdown to chaos. Then, mathematical analysis and detailed numerical investigations have enabled to establish that such a transition corresponds to the so-called route to Shilnikov spiral chaos but gives rise to a "double spiral attractor".
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http://dx.doi.org/10.1038/s41598-020-76108-z | DOI Listing |
ACS Appl Mater Interfaces
December 2024
School of Materials Science and Engineering, UNSW Sydney, NSW 2052, Australia.
Domain walls are quasi-one-dimensional topological defects in ferroic materials, which can harbor emergent functionalities. In the case of ferroelectric domain wall (FEDW) devices, an exciting frontier has emerged: memristor-based information storage and processing approaches. Memristor solid-state FEDW devices presented thus far, however predominantly utilize a complex network of domain walls to achieve the desired regulation of density and charge state.
View Article and Find Full Text PDFACS Nano
December 2024
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea.
Physical unclonable functions (PUFs), often referred to as digital fingerprints, are emerging as critical elements in enhancing hardware security and encryption. While significant progress has been made in developing optical and memory-based PUFs, integrating reconfigurability with sensitivity to circularly polarized light (CPL) remains largely unexplored. Here, we present a chiroptical synaptic memristor (CSM) as a reconfigurable PUF, leveraging a two-dimensional organic-inorganic halide chiral perovskite.
View Article and Find Full Text PDFChem Rev
December 2024
Sandia National Laboratories, Livermore, California 94550, United States.
Since the early 2000s, the impending end of Moore's scaling, as the physical limits to shrinking transistors have been approached, has fueled interest in improving the functionality and efficiency of integrated circuits by employing memristors or two-terminal resistive switches. Formation (or avoidance) of localized conducting channels in many memristors, often called "filaments", has been established as the basis for their operation. While we understand some qualitative aspects of the physical and thermodynamic origins of conduction localization, there are not yet quantitative models that allow us to predict when they will form or how large they will be.
View Article and Find Full Text PDFJ Phys Chem Lett
December 2024
Instituto de Tecnología Química (Universitat Politècnica de València-Agencia Estatal Consejo Superior de Investigaciones Científicas), Av. dels Tarongers, 46022, València, Spain.
Memristors stand out as promising components in the landscape of memory and computing. Memristors are generally defined by a conductance mechanism containing a state variable that imparts a memory effect. The current-voltage cycling causes transitions of conductance, which are determined by different physical mechanisms, such as the formation of conducting filaments in an insulating surrounding.
View Article and Find Full Text PDFMolecules
November 2024
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Among the transition metal oxides, hematite (α-FeO) has been widely used in the preparation of memristors because of its excellent physical and chemical properties. In this paper, α-FeO nanowire arrays with a preferred orientation along the [110] direction were prepared by a facile hydrothermal method and annealing treatment on the FTO substrate, and then α-FeO nanowire array-based Au/α-FeO/FTO memristors were obtained by plating the Au electrodes on the as-prepared α-FeO nanowire arrays. The as-prepared α-FeO nanowire array-based Au/α-FeO/FTO memristors have demonstrated stable nonvolatile bipolar resistive switching behaviors with a high resistive switching ratio of about two orders of magnitude, good resistance retention (up to 10 s), and ultralow set voltage (V = +2.
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