AI Article Synopsis
- - The study presents the first S-band hybrid amplifiers using hydrogenated-diamond (H-diamond) FETs, featuring two designs aimed at low-noise amplification and high-power operation.
- - The low-noise amplifier shows a noise figure of 7-8 dB, with a transducer gain of 5-8 dB and an output intercept point (OIP3) of 21 dBm at 2 GHz.
- - The power-oriented amplifier offers a transducer gain of 5-6 dB and a 1-dB output compression point of 20 dBm, with an OIP3 of 33 dBm, allowing for a combined transducer gain of approximately 15 d
Article Abstract
The first realizations of S-band hybrid amplifiers based on hydrogenated-diamond (H-diamond) FETs are reported. As test vehicles of the adopted H-diamond technology at microwave frequencies, two designs are proposed: one, oriented to low-noise amplification, the other, oriented to high-power operation. The two amplifying stages are so devised as to be cascaded into a two-stage amplifier. The activities performed, from the technological steps to characterization, modelling, design and realization are illustrated. Measured performance demonstrates, for the low-noise stage, a noise figure between 7 and 8 dB in the 2-2.5 GHz bandwidth, associated with a transducer gain between 5 and 8 dB. The OIP3 at 2 GHz is 21 dBm. As to the power-oriented stage, its transducer gain is 5-6 dB in the 2-2.5 GHz bandwidth. The 1-dB output compression point at 2 GHz is 20 dBm whereas the OIP3 is 33 dBm. Cascading the measured S-parameters of the two stages yields a transducer gain of 15 ± 1.2 dB in the 2-3 GHz bandwidth.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7643067 | PMC |
| http://dx.doi.org/10.1038/s41598-020-75832-w | DOI Listing |
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