AI Article Synopsis
Article Abstract
The absence of a high-performance p-channel oxide thin-film transistor (TFT) is the major challenge faced in the current oxide semiconductor device technology. Simple solution-based back-channel subgap defect termination using sulfur was developed for p-channel cuprous oxide (CuO)-TFTs. We investigated the origin of poor device characteristics in conventional CuO-TFTs and clarified that it was mainly because of a back-channel donor-like defect of ∼2.8 ×10 cm eV, which originated from the interstitial Cu defect. Sulfur ion treatment using thiourea effectively reduced the back-channel defect down to <3 × 10 cm eV and demonstrated the CuO-TFT with a saturation mobility of 1.38 ± 0.7 cm V s, a -value of 2.35 ± 1.22 V decade, and an on/off current ratio of ∼4.1 × 10. The improvement of device characteristics was attributed to the reduction of back-channel defect by the formation of a thin CuSO back-channel passivation layer by the chemical reaction of interstitial Cu with S and O ions. An oxide-based complementary inverter using a p-channel CuO-TFT and a n-channel a-In-Ga-Zn-O-TFT was demonstrated with a high voltage gain of ∼230 at = 70 V.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acsami.0c11534 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions.
Micromachines (Basel)
July 2024
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
Article Synopsis
- * The research involved irradiating Cascode GaN power devices with Ge and Bi ions to explore the effects of electrical stress, LET values, and gate voltages on SEE.
- * Findings indicate that pre-stressing the device causes electron de-trapping and defects that increase charge collection, while higher LET values lead to more electron-hole pair generation, influencing drain leakage current and device reliability under radiation.
Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors.
Micromachines (Basel)
March 2024
School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055, China.
This study reveals the pronounced density of oxygen vacancies (Vo) at the back channel of back-channel-etched (BCE) a-InGaZnO (a-IGZO) thin-film transistors (TFTs) results from the sputtered deposition rather than the wet etching process of the source/drain metal, and they are distributed within approximately 25 nm of the back surface. Furthermore, the existence and distribution depth of the high density of Vo defects are verified by means of XPS spectra analyses. Then, the mechanism through which the above Vo defects lead to the instability of BCE a-IGZO TFTs is elucidated.
View Article and Find Full Text PDFSolution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability.
Micromachines (Basel)
January 2024
Department of Advanced Components and Materials Engineering, Sunchon National University, Sunchon 57922, Republic of Korea.
To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing.
View Article and Find Full Text PDFHigh-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors byHplasma and neutral oxygen beam irradiation treatment.
Nanotechnology
February 2023
Department of Optoelectronics & Materials Engineering, Chung Hua University, Hsinchu, 30010, Taiwan, ROC.
In this work, staggered bottom-gate structure amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with high-k ZrOgate dielectric were fabricated using low-cost atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) withhydrogenation to modulate the carrier concentration and improve interface quality. Subsequently, a neutral oxygen beam irradiation (NOBI) technique is applied, demonstrating that a suitable NOBI treatment could successfully enhance electrical characteristics by reducing native defect states and minimize the trap density in the back channel. A reverse retrograde channel (RRGC) with ultra-high/low carrier concentration is also formed to prevent undesired off-state leakage current and achieve a very low subthreshold swing.
View Article and Find Full Text PDFAtomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter.
ACS Appl Mater Interfaces
November 2021
Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Drive, La Jolla, California 92093, United States.
Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, SnO channel with a thickness of ∼1 nm, which was grown by a vacuum-free, solvent-free, metal-liquid printing process at low temperatures, as low as 250 °C in an ambient atmosphere. By performing oxygen-vacancy defect termination for the bulk-channel and back-channel surface of the ultrathin SnO channel, the presented p-channel SnO TFT exhibited good device performances with a reasonable TFT mobility of ∼0.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!