Severity: Warning
Message: file_get_contents(https://...@gmail.com&api_key=61f08fa0b96a73de8c900d749fcb997acc09): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 143
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 143
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 209
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3098
Function: getPubMedXML
File: /var/www/html/application/controllers/Detail.php
Line: 574
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 488
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 316
Function: require_once
Severity: Warning
Message: Attempt to read property "Count" on bool
Filename: helpers/my_audit_helper.php
Line Number: 3100
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3100
Function: _error_handler
File: /var/www/html/application/controllers/Detail.php
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Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 488
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
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Function: require_once
We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 °C. Different thicknesses result in IZTO films containing versatile phases, such as amorphous, low-, and high-crystalline structures even after annealing at 700 °C. A 19-nm-thick IZTO film clearly showed a phase transformation from initially amorphous to polycrystalline bixbyite structures, while the ultra-thin film (5 nm) still maintained an amorphous phase. Transistors including amorphous and low crystalline IZTO films fabricated at 350 and 700 °C show reasonable carrier mobility (µ) and on/off current ratio (I) values of 22.4-35.9 cm V s and 1.0-4.0 × 10, respectively. However, their device instabilities against positive/negative gate bias stresses (PBS/NBS) are unacceptable, originating from unsaturated bonding and disordered sites in the metal oxide films. In contrast, the 19-nm-thick annealed IZTO films included highly-crystalline, 2D spherulitic crystallites and fewer grain boundaries. These films show the highest µ value of 39.2 cm V s in the transistor as well as an excellent I value of 9.7 × 10. Simultaneously, the PBS/NBS stability of the resulting transistor is significantly improved under the same stress condition. This promising superior performance is attributed to the crystallization-induced lattice ordering, as determined by highly-crystalline structures and the associated formation of discrete donor levels (~ 0.31 eV) below the conduction band edge.
Download full-text PDF |
Source |
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7606507 | PMC |
http://dx.doi.org/10.1038/s41598-020-76046-w | DOI Listing |
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