AI Article Synopsis
- Understanding charge transfer in 2D materials is crucial for improving device performance using semiconductors and heterostructures.
- The study focuses on transition metal disulfide (TMD) heterostructures, revealing that varying the layer composition alters electron transfer rates significantly, with specific configurations slowing these rates down even more than traditional methods.
- Noninterfacial electron transfer across multiple thin layers is less effective due to the electric field from initial interfacial transfers, affecting how efficiently devices function.
Article Abstract
Understanding and controlling the charge transfer processes of two-dimensional (2D) materials are fundamental for the optimized device performance based on 2D semiconductors and heterostructures. The charge transfer rate is very robust in transition metal disulfide (TMD) heterostructures with type II band alignments, which can be manipulated by intercalating a dielectric layer like hBN to isolate the donor and acceptor monolayers. This study shows that there is an alternative way to change the electron transfer and recombination rates in the case of nLMoS/mLWSe multilayer heterostructures, where the donor-acceptor distance is maintained, but the rate of electron transfer is strongly layer dependent and shows asymmetry for the layer number of donor and acceptor monolayers. Especially, the 1LMoS/2LWSe heterostructure slows electron transfer and charge recombination rates ∼2.3 and ∼12 times that of the 1LMoS/1LWSe heterostructure, respectively, which have been competitive with that in the 1LMoS/hBN/1LWSe heterostructure. From an application perspective, the noninterfacial electron transfer in which photogenerated electrons should across more than one atomically thin layer is not favorable due to the built-in electric field established by the initial interfacial electron transfer.
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| http://dx.doi.org/10.1021/acs.jpclett.0c02952 | DOI Listing |
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