In this paper we present the first example of waveguides fabricated by UV writing in non-hydrogen loaded Ge-doped planar silica with 213 nm light. Single mode waveguides were fabricated and the numerical apertures and mode field diameters were measured for a range of writing fluences. A peak index change of 5.3 x 10 was inferred for the waveguide written with 70 kJ cm. The refractive index change is sufficient to match the index structure of standard optical fiber. Uniformity of the written structures was measured and a propagation loss of 0.39 ± 0.03 dB cm was determined through cutback measurements.
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http://dx.doi.org/10.1364/OE.402762 | DOI Listing |
In this paper we present the first example of waveguides fabricated by UV writing in non-hydrogen loaded Ge-doped planar silica with 213 nm light. Single mode waveguides were fabricated and the numerical apertures and mode field diameters were measured for a range of writing fluences. A peak index change of 5.
View Article and Find Full Text PDFPhys Chem Chem Phys
November 2017
Department of Physics, Michigan Technological University, Houghton, Michigan 49931, USA.
Recent advances in the synthesis and characterization of h-BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the lattice. In this paper, we consider a h-BN monolayer doped with C or Ge, and find that dopants modify the Fermi level of the pristine monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures.
View Article and Find Full Text PDFNanotechnology
October 2017
Université Grenoble-Alpes, F-38000 Grenoble, France. CEA-Grenoble, INAC-PHELIQS, 17 av. des Martyrs, F-38000 Grenoble, France.
In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 μm. Regarding the band-to-band properties, we discuss the variation of the screening of the internal electric field by free carriers, as a function of the doping density and well/nanodisk size.
View Article and Find Full Text PDFA full-vectorial finite-element-based approach has been developed to find accurate modal solutions of acoustic modes in Ge-doped planar silica waveguides. The structural symmetry is exploited, and Aitken's extrapolation is also used to improve the accuracy of the solution. The spatial dependences of the dominant and nondominant displacement vectors are shown for the fundamental and higher-order transverse modes.
View Article and Find Full Text PDFRing resonators are promising building blocks for developing compact optical filters with arbitrary functions; however, a major challenge for planar waveguide filter implementations is to overcome the limited free spectral range (FSR) for a given core-to-cladding refractive-index difference (D) while maintaining low loss and a large range of coupling ratios. The loss and coupling of rings operating in the whispering-gallery-mode regime were investigated by use of Ge-doped silica waveguides with a low refractive-index difference (D=0.75%) .
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