Accurate detection of glucose is essential for the diagnosis of diabetes, wherein effective and sensitive biosensors for glucose detection are needed. Here, we fabricated a glucose sensor based on field-effect transistor (FET) with bimetallic nickel-copper metal-organic frameworks (Ni/Cu-MOFs) as its channel layers which were grown in-situ through a simple one-step hydrothermal method and modified with glucose oxidase (GOD) by using glutaraldehyde (GA) as linkers. Due to the synergistic effect of Ni ions and Cu ions in MOFs, the sensor (GOD-GA-Ni/Cu-MOFs-FET) showed good field effect performance and great responses to glucose through enzymatic reactions. It displayed a piecewise linear relationship in the wide range (1 μM-20 mM), and provided high sensitivity (26.05 μAcmmM) in the low concentration (1-100 μM) and a low detection limit (0.51 μM). The sensor also had these advantages of high specificity, excellent reproducibility, good short-term stability and fast response time. Especially, it is indicated that the Ni/Cu-MOFs-FETs with high performance have the potential to be available sensors, paving the way for the application of bimetallic MOFs in biosensing.
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http://dx.doi.org/10.1016/j.bios.2020.112736 | DOI Listing |
Sensors (Basel)
January 2025
School of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters' (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques.
View Article and Find Full Text PDFSensors (Basel)
January 2025
National Institute of Natural Hazards, Beijing 100085, China.
Borehole strainmeters are essential tools for observing crustal deformation. In long-term observational applications, the dynamic changes in crustal deformation over multi-year scales often exceed the single measurement range of borehole strainmeters. Expanding the measurement range while maintaining high precision is a critical technical challenge.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Department of IT Semiconductor Convergence Engineering, Research Institute of Advanced Convergence Technology, Tech University of Korea, Siheung 15073, Republic of Korea.
The increasing demand for advanced transparent and flexible display technologies has led to significant research in thin-film transistors (TFTs) with high mobility, transparency, and mechanical robustness. In this study, we fabricated all-transparent TFTs (AT-TFTs) utilizing amorphous indium-zinc-tin-oxide (a-IZTO) as a dual-functional material for both the channel layer and transparent conductive electrodes (TCEs). The a-IZTO was deposited using radio-frequency magnetron sputtering, with its composition adjusted for both channel and electrode functionality.
View Article and Find Full Text PDFMicromachines (Basel)
January 2025
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
In this paper, a novel p-type junctionless field effect transistor (PJLFET) based on a partially depleted silicon-on-insulator (PD-SOI) is proposed and investigated. The novel PJLFET integrates a buried N+-doped layer under the channel to enable the device to be turned off, leading to a special work mechanism and optimized performance. Simulation results show that the proposed PJLFET demonstrates an I/I ratio of more than seven orders of magnitude, with I reaching up to 2.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
State Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology, School of Microelectronics, Xi'an University of Electronic Science and Technology, Xi'an 710071, China.
This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. By combining theoretical analysis with device simulations, the impacts of the ferroelectric material anisotropy, ferroelectric layer thickness, and active region doping concentration on the device performance were systematically optimized. The proposed NCFET structure is tailored for microwave wireless power transmission applications.
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