Understanding the Switching Mechanisms of the Antiferromagnet/Ferromagnet Heterojunction.

Electric-field-driven spintronic devices are considered promising candidates for beyond CMOS logic and memory applications thanks to their potential for ultralow energy switching and nonvolatility. In this work, we have developed a comprehensive modeling framework to understand the fundamental physics of the switching mechanisms of the antiferromagnet/ferromagnet heterojunction by taking BiFeO/CoFe heterojunctions as an example. The models are calibrated with experimental results and demonstrate that the switching of the ferromagnet in the antiferromagnet/ferromagnet heterojunction is caused by the rotation of the Neel vector in the antiferromagnet and is not driven by the unidirectional exchange bias at the interface as was previously speculated. Additionally, we demonstrate that the fundamental limit of the switching time of the ferromagnet is in the subnanosecond regime. The geometric dependence and the thermal stability of the antiferromagnet/ferromagnet heterojunction are also explored. Our simulation results provide the critical metrics for designing magnetoelectric devices.