A facile procedure for the synthesis of ultra-fine silicon nanoparticles without the need for a Schlenk vacuum line is presented. The process consists of the production of a (HSiO) sol-gel precursor based on the polycondensation of low-cost trichlorosilane (HSiCl), followed by its annealing and etching. The obtained materials were thoroughly characterized after each preparation step by electron microscopy, Fourier transform and Raman spectroscopy, X-ray dispersion spectroscopy, diffraction methods and photoluminescence spectroscopy. The data confirm the formation of ultra-fine silicon nanoparticles with controllable average diameters between 1 and 5 nm depending on the etching time.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7540795PMC
http://dx.doi.org/10.1098/rsos.200736DOI Listing

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