The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ T), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (ω ≈ 0.140 THz) and sources in the IR region (ω ≈ 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (ω ≈ 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S) within the frequency range ω ≈ (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (δE) reached NEP ≈ 6.3 × 10 W/√Hz and δE ≈ 8.1 × 10 J, respectively.
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| http://dx.doi.org/10.1038/s41598-020-73850-2 | DOI Listing |
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