Optoelectronic devices that allow rerouting, modulation, and detection of the optical signals would be extremely beneficial for telecommunication technology. One of the most promising platforms for these devices is excitonic devices, as they offer very efficient coupling to light. Of especial importance are those based on indirect excitons because of their long lifetime. Here, we demonstrate excitonic transistor and router based on bilayer WSe Because of their strong dipole moment, excitons in bilayer WSe can be controlled by transverse electric field. At the same time, unlike indirect excitons in artificially stacked heterostructures based on transition metal dichalcogenides, naturally stacked bilayers are much simpler in fabrication.
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http://dx.doi.org/10.1126/sciadv.aba1830 | DOI Listing |
Nano Lett
January 2025
Department of Materials Science and Engineering, Centre for Functional Photonics, and Hong Kong Branch of National Precious Metals Material Engineering Research Centre, City University of Hong Kong, Hong Kong S.A.R., 999077, China.
The emission efficiency of interlayer excitons (IEs) in twisted 2D heterostructures has long suffered from momentum mismatch, limiting their applications in ultracompact excitonic devices. Here, we report strong room-temperature emission of the momentum-forbidden IEs in a 30°-twisted MoS/WS heterobilayer. Utilizing the Purcell effect of a compact plasmonic nanocavity boosts the IE emission intensity in the cavity by over 2 orders of magnitude.
View Article and Find Full Text PDFInorg Chem
January 2025
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, Warsaw 02-668, Poland.
The photoluminescence (PL) and Raman spectra of the CsZrCl crystal over a wide range of pressures were studied in this work for the first time. PL measurements were performed up to 10 GPa, while the Raman spectra were measured up to 20 GPa. The PL data revealed a linear blue shift of the emission maximum from about 2.
View Article and Find Full Text PDFAdv Mater
December 2024
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China.
Monolayer transition metal dichalcogenides (TMDs) with strong exciton effects have enabled diverse light emitting devices, however, their Ångstrom thickness makes it challenging to efficiently manipulate exciton emission by themselves. Although their nanostructured multi-layer counterparts can effectively manipulate optical field at deep subwavelength thickness scale, these indirect band gap multi-layer TMDs are lack of strong luminescence, hindering their applications in light emitting devices. Here, the integration of monolayer TMDs is presented with nanostructured multi-layer TMDs, combining both strong exciton emission and optical manipulation in a single ultra-thin platform.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada.
Inorganic lead-free metal halide perovskites have garnered much attention as low-toxicity alternatives to lead halide perovskites for luminescence and photovoltaic applications. However, the electronic structure and properties of these materials, including the composition dependence of the band structure, spin-orbit coupling, and Zeeman effects, remain poorly understood. Here, we investigated vacancy-ordered CsBiX (X= Cl, Br) perovskite nanocrystals using magnetic circular dichroism spectroscopy.
View Article and Find Full Text PDFNanoscale
December 2024
Optoelectronics and Photonics Laboratory, Department of Physics, Tezpur University, Napaam 784028, Assam, India.
SnS holds great promise in optoelectronics, especially in photovoltaic devices, due to its exceptional intrinsic electronic properties and optimal optical absorption. However, its prospective applications are often limited by structural instability or oxidation, leading to internal or external defect states. This study proposes a mixed-phase SnS/h-BN heterostructure to enhance chemical and thermal stability while preserving the intrinsic optoelectronic properties of SnS.
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