Carbon dioxide electrochemical reduction reaction (CORR) under ambient conditions provides an intriguing picture for conversion of CO to useful fuels and chemicals. Here by means of density functional theory (DFT) computations, the formation configuration and CORR catalytic activity of boron nitrogen cluster-doped graphdiyne (BN-doped GDY) were systematically investigated. The band structure and optical adsorption spectra reveal that BN-doped GDY exhibits semiconductor with the band gap of 0.902 eV and shows photothermal effect under visible and even infrared light irradiation. The BN-doped GDY could act as a hot spot to enhance CORR. The adsorption configurations of various reaction intermediates indicate that boron atoms are active sites, which can be further confirmed by charge analysis. Based on thermodynamic analysis, the reaction pathways and onset potentials were studied as compared with Cu(111) surface. For the production of CO, the onset potential for BN-doped GDY (-1.06 V) is higher than that for Cu(111) surface. While for the reduction of CO to HCOOH, CH, CHOH, and CH on BN-doped GDY, the onset potentials are lower than that on Cu(111) surface, which are -0.57 V, -0.62 V, -0.57 V, and -0.82 V, respectively. Moreover, the onset potential of competitive hydrogen evolution reaction on BN-doped GDY is high to -0.82 V, which shows us a good selectivity towards to CORR rather than HER. Our results may pave a new avenue for the conversion of CO into high-value fuels and chemicals.
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http://dx.doi.org/10.1088/1361-6528/abb26e | DOI Listing |
Nanotechnology
December 2020
School of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China.
Carbon dioxide electrochemical reduction reaction (CORR) under ambient conditions provides an intriguing picture for conversion of CO to useful fuels and chemicals. Here by means of density functional theory (DFT) computations, the formation configuration and CORR catalytic activity of boron nitrogen cluster-doped graphdiyne (BN-doped GDY) were systematically investigated. The band structure and optical adsorption spectra reveal that BN-doped GDY exhibits semiconductor with the band gap of 0.
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