Quantum dots (QDs) comprise an emerging group of materials with innumerable number of possibilities in biological research including cellular labelling. Among the leading members in this category, ZnSe/ZnS quantum dots (QDs) hold greater attractive possibilities in imaging primarily due to their higher biocompatibility and dispersibility. Nevertheless, the inherent toxicity of ZnSe/ZnS QDs is not yet completely explored which largely compromise most of their biomedical application potential. Strong blue emitting water soluble QDs effectively synthesized by aqueous phase route. Synthesized QDs further subjected to various optical and physicochemical characterization. Approximately 5-6 nm sized ZnSe/ZnS QDs illuminated bluish green fluorescence under UV lamp. Present study addresses possible adverse effects of ZnSe/ZnS QDs in hepatic system using HepG2 cells; which is the routinely employed in vitroliver cell model. A bundle of assays wasperformed out to reveal the cytotoxic nature of ZnSe/ZnS QDs and the mechanism behind it. Herein, absorption, distribution, metabolism, excretion and toxicity (ADME and T) of ZnSe/ZnS in mice were profiled in detail followed by intravenous (i.v.) and intraperitoneal (i.p.) administration at a dose of 10 mg/kg body weight. In a short review, it could be state that ZnSe/ZnS QDs did not exhibit any significant in vivo toxicity outcome in mice.
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http://dx.doi.org/10.1016/j.jphotobiol.2020.112019 | DOI Listing |
Sci Bull (Beijing)
January 2025
Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China; Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Zhuhai MUST Science and Technology Research Institute, Macau University of Science and Technology, Macao 999078, China; Institute of Organic Optoelectronics (IOO), Jiangsu Industrial Technology Research Institute (JITRI), Suzhou 215200, China. Electronic address:
High-quality quantum dots (QDs) possess superior electroluminescent efficiencies and ultra-narrow emission linewidths are essential for realizing ultra-high definition QD light-emitting diodes (QLEDs). However, the synthesis of such QDs remains challenging. In this study, we present a facile high-temperature successive ion layer adsorption and reaction (HT-SILAR) strategy for the growth of precisely tailored ZnCdSe/ZnSe shells, and the consequent production of high-quality, large-particle, alloyed red CdZnSe/ZnCdSe/ZnSe/ZnS/CdZnS QDs.
View Article and Find Full Text PDFACS Appl Bio Mater
January 2025
Department of Chemistry, North Carolina State University, Raleigh, North Carolina 27695, United States.
Ligand-functionalized InP-based quantum dots (QDs) have been developed as an innovative class of nontoxic photosensitizer suitable for antimicrobial applications, aimed at reducing or preventing pathogen transmission from one host to another via high contact surfaces. A hot injection method followed by functionalization via ligand exchange with 9-anthracene carboxylic acid (ACA) yielded the desired core/shell InP/ZnSe/ZnS QDs. Transmission electron microscopy (TEM) revealed these QDs to be uniform in size (∼3.
View Article and Find Full Text PDFMolecules
December 2024
Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea.
Ternary InGaP quantum dots (QDs) have emerged as promising materials for efficient blue emission, owing to their tunable bandgap, high stability, and superior optoelectronic properties. However, most reported methods for Ga incorporation into the InP structure have predominantly relied on cation exchange in pre-grown InP QDs at elevated temperatures above 280 °C. This is largely due to the fact that, when heating In and P precursors in the presence of Ga, an InP/GaP core-shell structure readily forms.
View Article and Find Full Text PDFInP quantum dots (QDs) have emerged as promising nanomaterials in various fields due to their exceptional optical properties. However, its wide emission linewidth limits further application. In this study, we synthesized high-quality InP/ZnSe/ZnS QDs by suppressing hole defects.
View Article and Find Full Text PDFInP-based quantum dots (QDs) are widely adopted as a superior alternative to CdSe-based QDs in various fields owing to their high quantum yield, environmental friendliness, and excellent stability. However, improving its color purity remains a challenging task. In this work, we employ a multistage heating strategy to optimize the nucleation and shell growth processes of amino-phosphine-based InP/ZnSe/ZnS QDs for reducing emission linewidths.
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