In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO/Ge-HfO/HfO three-layer structure. This kind of transistor has a switching ratio of 10 between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene. The transistor acts as a three-terminal memristor, termed a memtransistor, with applications in neuromorphic computation.
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Wafer-scale graphene-ferroelectric HfO/Ge-HfO/HfO transistors acting as three-terminal memristors.
Nanotechnology
December 2020
National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126 A, Voluntari 077190, Romania.
In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO/Ge-HfO/HfO three-layer structure. This kind of transistor has a switching ratio of 10 between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene.
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