Till now electron microscopy techniques have not been used to evaluate the plasma-target interactions undergone during the magnetron sputtering process. The destructive nature of this interaction severely alters the target microstructure. Utilising quantitative microscopy techniques can shed light on the complex plasma and solid-state processes involved which can ultimately lead to improved functional thin film deposition. As a representative functional material, aluminium-doped-zinc oxide (AZO) is an upcoming alternative to conventional transparent electrode wherein the process optimisation is of great importance. In this paper, we evaluate the pre- and post-sputter field emission scanning electron microscopy (FESEM) data for ceramic AZO target fabricated at three final sintering temperatures (1100°C, 1200°C and 1300°C). In all cases, grain boundaries are merged in addition to a visible reduction in the secondary phases which makes segmentation-based image analysis challenging. Through surface statistics (i.e. fractal dimension, autocorrelation length, texture aspect ratio and entropy) as a function of magnification we can quantify the electron microscopy image of the microstructure. We show that the plasma-microstructure interaction leads to an increase in autocorrelation length, texture aspect ratio and entropy for the optimum AZO ceramic sputtering target sintered at 1200°C. Furthermore, a maximum reduction in fractal dimension span (as determined by exponential regression) is also observed for 1200°C. In addition to the evaluation of plasma effects on sintering, our approach can provide a window towards understanding the underlying thin film growth mechanisms. We believe that this technique can be applied to the defect characterisation of a wide range of polycrystalline ceramic sputtering targets (e.g. ITO, CZTS, GAZO and so on) with the ultimate goal of improving the magnetron sputtering process and the resulting functional thin film. LAY DESCRIPTION: Magnetron sputtering allows scientists to make functional thin films on the order of the nanoscale. In this technique, atoms are plucked from a 'target' then placed onto a substrate forming a thin nanometric film: all thanks to magnets, a special power supply and the fourth state of matter (plasma). Understanding what is going on and how to make a 'good' thin film is important for making better light emitting diodes, solar cells and light sensors. Scientists use electron microscopy to see what is going on in the microstructure of the sputtered thin films to fine tune the sputtering recipe. Here, for the first time, we have applied electron microscopy to see the surface of the microstructure before and after magnetron sputtering. This will help us understanding the plasma-microstructure interaction allowing us to make more informed decisions when fine-tuning the sputtering process to get improved thin films. This is a case study of aluminium-doped zinc oxide (AZO) target that could potentially replace indium tin oxide (ITO), which is widely used as a transparent electrode in devices involving light and electricity. In this case, improved characteristics would be lower electrical resistivity and higher transmission of light. We show that it is possible to use a mathematical description (e.g. the fractal dimension) of the scanning electron microscopy picture to show a link between the target surface and the functional properties. Simple explanation of fractal dimensions by Sixty Symbols ○ https://www.youtube.com/watch?v=cmBljeC79Ls Experimental demonstration of magnetron sputtering by The Thought Emporium ○ https://www.youtube.com/watch?v=Cyu7etM-0Ko Introductory video on magnetron sputtering by Applied Science ○ https://www.youtube.com/watch?v=9OEz_e9C4KM Demonstration of AZO target fabrication and sputtering by Pradhyut Rajjkumar ○ https://www.youtube.com/watch?v=kTLaTJfNX3c Simple explanation of a DIY SEM by Applied Science ○ https://www.youtube.com/watch?v=VdjYVF4a6iU.
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http://dx.doi.org/10.1111/jmi.12961 | DOI Listing |
J Phys Chem Lett
January 2025
Thin film Energy Storage Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203Tamil Nadu India.
Manganese oxides are a promising cathode material for aqueous zinc-ion batteries (AZIBs), but thin-film configurations remain underexplored. This study investigates the electrochemical dynamics of 60 nm thin MnO thin films, fabricated via RF magnetron reactive sputtering. It addresses the highest reported capacity (25 mAh/g) in thin film form, stability over 500 cycles, effective performance across varying current rates, surpassing previous studies and challenges such as phase stability, and capacity fading over extended cycling, aiming to enhance uniformity, minimizing diffusion barriers for improved performance.
View Article and Find Full Text PDFNanoscale
January 2025
College of Science, China Agricultural University, Beijing, 100083, China.
Aqueous zinc-ion batteries are an appealing electrochemical energy storage solution due to their affordability and safety. Significant attention has been focused on vanadium oxide cathode materials for ZIBs, owing to their high specific capacity, unique layered or tunnel structures, and low cost. Compared to traditional methods for preparing and assembling electrode materials, direct current (DC) magnetron sputtering allows direct synthesis and uniform deposition on current collectors, offering advantages such as simplicity, mild reaction conditions, and strong film adhesion.
View Article and Find Full Text PDFRSC Adv
January 2025
Faculty of Physics & Engineering Physics, VNUHCM-University of Science Ho Chi Minh City 70000 Vietnam
Direct current magnetron sputtering was employed to fabricate In-N dual-doped SnO films, with varying concentrations of N in a mixed sputtering gas of N and argon (Ar). The quantity of -substituted O elements in the SnO lattice was confirmed through energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS). A comprehensive investigation of properties of the In-N dual-doped SnO films was conducted using various techniques, including X-ray diffraction analysis, field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), ultraviolet absorption spectroscopy, Hall effect measurements, and current-voltage (-) characteristic assessments.
View Article and Find Full Text PDFSci Rep
January 2025
Walter Schottky Institute, Technical University of Munich, 85748, Garching, Germany.
We investigate the growth of amorphous MoSi thin films using magnetron co-sputtering and optimize the growth conditions with respect to crystal structure and superconducting properties (e.g., critical temperature [Formula: see text]).
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
Implantable memristors are considered an emerging electronic technology that can simulate brain memory function and demonstrate some promising applications in the biomedical field. However, it remains a critical challenge to enhance their long-term stability and biocompatibility in implantation environments. In this work, an implantable memristor has been successfully fabricated based on TiO using magnetron sputtering.
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