Cathodoluminescence (CL) is used as a quantitative characterization technique to probe impurities at the metal-organic chemical vapor deposition (MOCVD) grown GaN-on-GaN homoepitaxial interfaces. CL intensity contrast shows a strong correlation with the interfacial impurity concentrations. Based on the analysis of recombination mechanisms of electron beam induced non-equilibrium carriers, an analytical model is proposed to quantitatively determine the impurity concentrations from CL intensity. The extracted interfacial impurity concentrations from the analytical model show a good agreement with the compensation levels obtained from capacitance-voltage measurement, signifying the potential of CL for probing the quantitative impurity levels in GaN-on-GaN structures. This approach can also be extended to be applied in other material systems.
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http://dx.doi.org/10.1364/OE.399986 | DOI Listing |
Appl Radiat Isot
January 2025
Department of Medical Physics, Copernicus Memorial Hospital in Lodz Comprehensive Cancer Center and Traumatology, Lodz, Poland; Department of Medical Imaging Technology, Medical University of Lodz, Ul. Lindleya 6, 90-131, Łódź, Poland.
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January 2025
Department of Mining and Explosives Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA.
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Department of Civil and Environmental Engineering, University of Florence, Via di S. Marta, 3, 50139, Firenze, Italy.
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Faculty of Material Science and Engineering, K. N. Toosi University of Technology, Tehran, Iran.
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