A mathematical approach is introduced for predicting quantized resistances in graphene junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield nonconventional, fractional multiples of the typical quantized Hall resistance at the = 2 plateau ( ≈ 12906 Ω) and take the form: . This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene devices with multiple source and drain terminals.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7450729 | PMC |
Publication Analysis
Top Keywords
Similar Publications
Dots and boxes algorithm for Peierls substitution: Application to multidomain topological insulators.
J Phys Condens Matter
December 2024
Departamento de Física, Facultad de Ciencias, Universidad Nacional Autónoma de México, Circuito interior s/n, Colonia Universidad Nacional Autónoma de México, Coyoacán, C.P. 0451 Ciudad Universitaria, Ciudad de México, México, Ciudad de Mexico, 04510, MEXICO.
Magnetic fields can be introduced into discrete models of quantum systems by the Peierls substitution. For tight-binding Hamiltonians, the substitution results in a set of (Peierls) phases that are usually calculated from the magnetic vector potential. As the potential is not unique, a convenient gauge can be chosen to fit the geometry and simplify calculations.
View Article and Find Full Text PDFObservation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs.
Natl Sci Rev
December 2024
State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
The Mott-Ioffe-Regel limit sets the lower bound of the carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of the quasiparticle scattering rate, such as linear-in-temperature resistivity, while the quasiparticle coherence phenomena in this regime are much less explored due to the short mean free path at the diffusive bound.
View Article and Find Full Text PDFNon-parametric full cross mapping (NFCM): a highly-stable measure for causal brain network and a pilot application.
J Neural Eng
December 2024
Lanzhou University, No. 222 South Tianshui Road, Lanzhou, Gansu, 730000, CHINA.
Objective: Measuring causal brain network from neurophysiological signals has recently attracted much attention in the field of neuroinformatics. Traditional data-driven algorithms are computationally time-consuming and unstable due to parameter settings.
Approach: To resolve these limits, we proposed a novel parameter-free technique, called "non-parametric full cross mapping (NFCM)".
Double Quantum Spin Hall Phase in Moiré WSe.
Nano Lett
November 2024
School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States.
Quantum spin Hall (QSH) insulators are topologically protected phases of matter in two dimensions that can support a pair of helical edge states surrounding an insulating bulk. A higher (even) number of helical edge state pairs is usually not possible in real materials because spin mixing would gap out the edge states. Here, we report experimental evidence for a QSH phase with one and two pairs of helical edge states in twisted bilayer WSe at Moiré hole filling factor ν = 2 and 4, respectively.
View Article and Find Full Text PDFNovel Bulk Quantum Hall Effect in Nanostructured TaP Macroscopic Crystals.
Nano Lett
November 2024
National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
Article Synopsis
- The study reports the observation of bulk quantum Hall effect (QHE) in large TaP crystals, which is a significant advancement compared to previous findings in smaller 2D systems.
- This phenomenon is characterized by simultaneous quantum plateaus in both transverse and vertical resistivity, indicating coherent electron transport.
- The observed bulk QHE occurs due to the interaction of Landau cyclotron movement in a magnetic field and the periodic structure of nanometer-scale lamellae, suggesting that engineering microstructures can enhance electron transport in bulk materials.
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!