The manufacturing of parts from nickel-based superalloy Alloy 247LC by laser powder bed fusion (L-PBF) is challenging, primarily owing to the alloy's susceptibility to cracks. Apart from the cracks, voids created during the L-PBF process should also be minimized to produce dense parts. In this study, samples of Alloy 247LC were manufactured by L-PBF, several of which could be produced with voids and crack density close to zero. A statistical design of experiments was used to evaluate the influence of the process parameters, namely laser power, scanning speed, and hatch distance (inherent to the volumetric energy density) on void formation, crack density, and microhardness of the samples. The window of process parameters, in which minimum voids and/or cracks were present, was predicted. It was shown that the void content increased steeply at a volumetric energy density threshold below 81 J/mm3. The crack density, on the other hand, increased steeply at a volumetric energy density threshold above 163 J/mm3. The microhardness displayed a relatively low value in three samples which displayed the lowest volumetric energy density and highest void content. It was also observed that two samples, which displayed the highest volumetric energy density and crack density, demonstrated a relatively high microhardness; which could be a vital evidence in future investigations to determine the fundamental mechanism of cracking. The laser power was concluded to be the strongest and statistically most significant process parameter that influenced void formation and microhardness. The interaction of laser power and hatch distance was the strongest and most significant factor that influenced the crack density.
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http://dx.doi.org/10.3390/ma13173770 | DOI Listing |
Adv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
View Article and Find Full Text PDFNano Lett
January 2025
College of Chemistry and Materials Science, Hebei University, Baoding 071002, Hebei, P. R. China.
Ultrahigh nickel cathode materials are widely utilized due to their outstanding energy and power densities. However, the presence of cobalt can cause significant lattice distortion during charge and discharge cycles, leading to the loss of active lithium, the formation of lattice cracks, and the emergence of a rock salt phase that hinders lithium-ion transport. Herein, we developed a novel cobalt-free, aluminum-doped cathode material, LiNiMnAlO (NMA), which effectively delays the harmful H2-H3 phase transition, reduces lattice distortion, alleviates stress release, and significantly enhances structural stability.
View Article and Find Full Text PDFNanoscale
January 2025
Advanced Batteries Research Center, Korea Electronics Technology Institute, 25, Saenari-ro, Seongnam-si, 13509, Republic of Korea.
The SiO electrode interface is passivated with a SiO layer, which hinders the deposition of an inorganic solid electrolyte interphase (SEI) due to its high surface work function and low exchange current density of electrolyte decomposition. Consequently, a thermally vulnerable, organic-based SEI formed on the SiO electrode, leading to poor cycling performance at elevated temperatures. To address this issue, the SEI formation process is thermoelectrochemically activated.
View Article and Find Full Text PDFSci Rep
January 2025
School of Civil Engineering, Architecture and Environment, Hubei University of Technology, Wuhan, 430068, China.
With the advancement of ecological and environmental protection construction, the research on the modification of expansive soil using environmentally friendly polymers can make up for the harm to the ecological environment caused by traditional modification. Mechanical and microscopic properties of modified expansive soils were analyzed through indoor tests. The results showed that the liquid limit and plasticity index decreased by 52.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China.
The performance of lead sulfide colloidal quantum dot (PbS-CQD) solar cells has long been hindered by interface defects in the transport layer. Traditionally, 1,2-ethanedithiol (EDT), used in solid-state ligand exchange, has been a common choice as the hole transport layer (HTL) in many PbS-CQD solar cells. However, the rapid reaction rate and chain length mismatch (shorter-chain EDT versus longer-chain oleic acid) during the ligand exchange process often introduce crack defects in the HTL film, resulting in an unexpected low performance.
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