Structure and properties of an inorganic perovskite CsSnI demonstrated its potential as a light-harvester or electron-hole transport material; however, its optoelectronic properties are poorer than those of lead-based perovskites. Here, we report the way of light tuning of absorption and transport properties of cesium iodostannate(IV) CsSnI via partial heterovalent substitution of tin for indium. Light absorption and optical bandgaps of materials have been investigated by UV-vis absorption and photoluminescent spectroscopies. Low-temperature electron paramagnetic resonance spectroscopy was used to study the kind of paramagnetic centers in materials.
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http://dx.doi.org/10.3389/fchem.2020.00564 | DOI Listing |
J Phys Chem Lett
January 2025
School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.
Adv Mater
December 2024
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
Metal halide perovskites have shown exceptionally slow hot-carrier cooling, which has been attributed to various physical mechanisms without reaching a consensus. Here, experiment and theory are combined to unveil the carrier cooling process in formamidinium (FA) and caesium (Cs) tin triiodide thin films. Through impulsive vibrational spectroscopy and molecular dynamics, much shorter phonon dephasing times of the hybrid perovskite, which accounts for the larger blueshift in the photoluminescence seen at high excitation density for FASnI compared to CsSnI is reported.
View Article and Find Full Text PDFACS Nano
December 2024
Material Science and Engineering Program (MSE), Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
The quantum-dot-in-perovskite matrix (DIM) is an emerging class of semiconductors for optoelectronics enabled by their complementary charge transport properties and stability improvements. However, a detailed understanding of the pure electrical properties in DIM is still in its early stage. Here, we developed PbS quantum dot-in-CsSnI matrix solids exhibiting improved electrical properties and enhanced stability.
View Article and Find Full Text PDFChem Mater
November 2024
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, 9747 AG Groningen, The Netherlands.
Tin halide perovskites are promising for optoelectronics, although their sensitivity to ambient conditions due to Sn(II) oxidation presents a challenge. Encapsulation techniques can mitigate degradation and facilitate advanced studies of the intrinsic properties. To study and improve the ambient stability of CsSnBr and CsSnI nanocrystal (NC) thin films, we explored various encapsulation methods: organic, inorganic, and hybrid.
View Article and Find Full Text PDFNat Commun
November 2024
Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.
Eco-friendly Sn-based perovskites show significant potential for high-performance second near-infrared window light-emitting diodes (900 nm - 1700 nm). Nevertheless, achieving efficient and stable Sn-based perovskite second near-infrared window light-emitting diodes remains challenging due to the propensity of Sn to oxidize, resulting in detrimental Sn-induced defects and compromised device performance. Here, we present a targeted strategy to eliminate Sn-induced defects through moisture-triggered hydrolysis of tin tetrahalide, without degrading Sn in the CsSnI film.
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