Incorporating functional atomic sites in graphene is essential for realizing advanced two-dimensional materials. Doping graphene with nitrogen offers the opportunity to tune its chemical activity with significant charge redistribution occurring between molecules and substrate. The necessary atomic scale understanding of how this depends on the spatial distribution of dopants, as well as their positions relative to the molecule, can be provided by scanning tunneling microscopy. Here we show that a noncovalently bonded molecule such as CoPc undergoes a variable charge transfer when placed on N-doped graphene; on a nitrogen pair, it undergoes a redox reaction with an integral charge transfer whereas a lower fractional charge transfer occurs over a single nitrogen. Thus, the charge state of molecules can be tuned by suitably tailoring the conformation of dopant atoms.
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http://dx.doi.org/10.1021/acs.nanolett.0c03030 | DOI Listing |
Phys Chem Chem Phys
January 2025
Department of Chemistry, COMSATS University Islamabad, Abbottabad Campus, Abbottabad-22060, Pakistan.
The design and synthesis of nonlinear optical (NLO) materials are rapidly growing fields in optoelectronics. Considering the high demand for newly designed materials with superior optoelectronic characteristics, we investigated the doping process of Group-IIIA elements (namely, B, Al and Ga) onto alkali metal (AM = Li, Na and K)-supported COLi (AM@COLi) complexes to enhance their NLO response. The AM-COLi complexes retained their structural features following interaction with the Group-IIIA elements.
View Article and Find Full Text PDFJ Mol Model
January 2025
Department of Theoretical Chemistry, Faculty of Chemistry, Jagiellonian University, Gronostajowa 2, 30-387, Krakow, Poland.
Context: The analysis of the changes in the electronic structure along intrinsic reaction coordinate (IRC) paths for model reactions: (i) ethylene + butadiene cycloaddition, (ii) prototype SN2 reaction Cl + CH3Cl, (iii) HCN/CNH isomerization assisted by water, (iv) CO + HF → C(O)HF was performed, in terms of changes in the deformation density (Δr) and the deformation of MEP (ΔMEP). The main goal was to further examine the utility of the ΔMEP as a descriptor of chemical bonding, and to compare the pictures resulting from Δr and ΔMEP. Both approaches clearly show that the main changes in the electronic structure occur in the TS region.
View Article and Find Full Text PDFIUCrJ
January 2025
Faculty of Chemistry, University of Warsaw, Pasteura 1, Warsaw, 02-093, Poland.
X-ray diffraction (XRD) has evolved significantly since its inception, becoming a crucial tool for material structure characterization. Advancements in theory, experimental techniques, diffractometers and detection technology have led to the acquisition of highly accurate diffraction patterns, surpassing previous expectations. Extracting comprehensive information from these patterns necessitates different models due to the influence of both electron density and thermal motion on diffracted beam intensity.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
We present a scalable protocol for measuring full counting statistics (FCS) in experiments or tensor-network simulations. In this method, an ancilla in the middle of the system acts as a turnstile, with its phase keeping track of the time-integrated particle flux. Unlike quantum gas microscopy, the turnstile protocol faithfully captures FCS starting from number-indefinite initial states or in the presence of noisy dynamics.
View Article and Find Full Text PDFPhys Rev Lett
December 2024
Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA.
Bilayers of two-dimensional van der Waals materials that lack an inversion center can show a novel form of ferroelectricity, where certain stacking arrangements of the two layers lead to an interlayer polarization. Under an external out-of-plane electric field, a relative sliding between the two layers can occur, accompanied by an interlayer charge transfer and a ferroelectric switching. We show that the domain walls that mediate ferroelectric switching are a locus of strong attractive interactions between electrons.
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