This work is focused on the structural and physical properties of CePtAl, an intermetallic compound. At room temperature, the modulated orthorhombic structure (00)000, with = (0.481, 0, 0) has been determined by single-crystal X-ray diffraction supplemented by dependence of lattice parameters above room temperature for which the X-ray powder diffraction was used. The compound undergoes a structural transition to a tetragonal structure above room temperature. This transition exhibits 50 °C hysteresis and creates a domain structure in the sample. The magnetic behavior has been studied by specific heat, magnetization, and transport measurements in the temperature range between 0.5 and 300 K. Specific heat and susceptibility shows an antiferromagnetic order below 2 K. On the basis of electrical resistivity and other bulk measurements, CePtAl can be considered a Kondo lattice material. The presence of a modulated crystal structure opens the possibility of a charge density wave state in CePtAl as observed for (Re)PtSi.
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http://dx.doi.org/10.1021/acs.inorgchem.0c01292 | DOI Listing |
Sci Rep
December 2024
School of Electrical Engineering, Aalto University, P.O. Box 15500, Aalto, FI-00076, Finland.
Engineering plastics are finding widespread applications across a broad temperature spectrum, with additive manufacturing (AM) having now become commonplace for producing aerospace-grade components from polymers. However, there is limited data available on the behavior of plastic AM parts exposed to elevated temperatures. This study focuses on investigating the tensile strength, tensile modulus and Poisson's ratio of parts manufactured using fused filament fabrication (FFF) and polyetheretherketone (PEEK) plastics doped with two additives: short carbon fibers (SCFs) and multi-wall carbon nanotubes (MWCNTs).
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December 2024
Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.
Extending ferroelectric materials to two-dimensional limit provides versatile applications for the development of next-generation nonvolatile devices. Conventional ferroelectricity requires materials consisting of at least two constituent elements associated with polar crystalline structures. Monolayer graphene as an elementary two-dimensional material unlikely exhibits ferroelectric order due to its highly centrosymmetric hexagonal lattices.
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December 2024
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS.
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December 2024
Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, CA, USA.
Tightly bound electron-hole pairs (excitons) hosted in atomically-thin semiconductors have emerged as prospective elements in optoelectronic devices for ultrafast and secured information transfer. The controlled exciton transport in such excitonic devices requires manipulating potential energy gradient of charge-neutral excitons, while electrical gating or nanoscale straining have shown limited efficiency of exciton transport at room temperature. Here, we report strain gradient induced exciton transport in monolayer tungsten diselenide (WSe) across microns at room temperature via steady-state pump-probe measurement.
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December 2024
School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China.
The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular magnetic anisotropy, remains a significant challenge. In this work, we report wafer-scale growth of vdW ferromagnet FeGaTe using molecular beam epitaxy.
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