Photoexcited electron extraction from semiconductors can be useful for converting solar energy into useful forms of energy. Although InP quantum dots (QDs) are considered alternative materials for solar energy conversion, the inherent instability of bare InP QDs demands the use of passivation layers such as ZnS for practical applications, which impedes carrier extraction from the QDs. Here, we demonstrate that Cu-doped InP/ZnS (InP/Cu:ZnS) QDs improve the electron transfer ability due to hole capture by Cu dopants. Steady-state and time-resolved photoluminescence studies confirmed that electrons were effectively transferred from the InP/Cu:ZnS QDs to a benzoquinone acceptor by retarding the electron-hole recombination within the QD. We evaluated the photocatalytic H evolution performance of InP/Cu:ZnS QDs under visible light, which showed outstanding photocatalytic H evolution activity and stability under visible light illumination. The photocatalytic activity was preserved even in the absence of a cocatalyst.

Download full-text PDF

Source
http://dx.doi.org/10.1021/acs.nanolett.0c00983DOI Listing

Publication Analysis

Top Keywords

inp/cuzns qds
12
electron transfer
8
quantum dots
8
solar energy
8
photocatalytic evolution
8
visible light
8
qds
6
controlled photoinduced
4
photoinduced electron
4
transfer inp/zns
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!