During the past decade, it has been shown that light-matter strong coupling of materials can lead to modified and often improved properties which has stimulated considerable interest. While charge transport can be enhanced in n-type organic semiconductors by coupling the electronic transition and thereby splitting the conduction band into polaritonic states, it is not clear whether the same process can also influence carrier transport in the valence band of p-type semiconductors. Here we demonstrate that it is indeed possible to enhance both the conductivity and photoconductivity of a p-type semiconductor rr-P3HT that is ultrastrongly coupled to plasmonic modes. It is due to the hybrid light-matter character of the virtual polaritonic excitations affecting the linear response of the material. Furthermore, in addition to being enhanced, the photoconductivity of rr-P3HT shows a modified spectral response due to the formation of the hybrid polaritonic states. This illustrates the potential of engineering the vacuum electromagnetic environment to improve the optoelectronic properties of organic materials.
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http://dx.doi.org/10.1021/acsnano.0c03496 | DOI Listing |
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December 2024
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, Shanghai, 200083, P. R. China.
Photodetectors (PDs) based on mix-dimensional heterojunctions (MDHJs) built from 2D layered materials and covalent-bonded semiconductors show the prospect of compensating the intrinsic weakness of 2D materials to realize their full potential. However, there is an open issue to improve the temporal response of PDs while maintaining high gain and sensitivity. Herein, photoconductive type MDHJs PDs with 2D InSe and covalent-bonded CdTe thin film are designed and fabricated in which InSe is the active layer and CdTe is the medium gain one.
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December 2024
School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China.
Neuromorphic computing, inspired by the brain, holds significant promise for advancing artificial intelligence. Artificial optoelectronic synapses, which can convert optical signals into electrical signals, play a crucial role in neuromorphic computing. In this study, we successfully fabricated a flexible artificial optoelectronic synapse device based on the ZnO/PDMS structure by utilizing the magnetron sputtering technique to deposit the ZnO film on a flexible substrate.
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November 2024
Department of Biomedical Engineering, Stony Brook University, Stony Brook, NY 11794, USA.
Recent advancements in novel fiber-coupled and portable terahertz (THz) spectroscopic imaging technology have accelerated applications in nondestructive testing (NDT). Although the polarization information of THz waves can play a critical role in material characterization, there are few demonstrations of polarization-resolved THz imaging as an NDT modality due to the deficiency of such polarimetric imaging devices. In this paper, we have inspected industrial carbon fiber composites using a portable and handheld imaging scanner in which the THz polarizations of two orthogonal channels are simultaneously captured by two photoconductive antennas.
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December 2024
Terahertz Photonics Laboratory, Center for Physical Sciences and Technology, Saulėtekio Ave. 3, 10257 Vilnius, Lithuania.
We investigated the carrier dynamics of ammonothermal Mn-compensated gallium nitride (GaN:Mn) semiconductors by using sub-bandgap and above-bandgap photo-excitation in a photoluminescence analysis and pump-probe measurements. The contactless probing methods elucidated their versatility for the complex analysis of defects in GaN:Mn crystals. The impurities of Mn were found to show photoconductivity and absorption bands starting at the 700 nm wavelength threshold and a broad peak located at 800 nm.
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December 2024
State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, China.
2D-layered materials are recognized as up-and-coming candidates to overcome the intrinsic physical limitation of silicon-based devices. Herein, the coexistence of positive persistent photoconductivity (PPPC) and negative persistent photoconductivity (NPPC) in SnSe thin films prepared by pulsed laser deposition provides an excellent avenue for engineering novel devices. It is determined that surface oxygen is co-regulated by physisorption and chemisorption, and the NPPC is attributed to the photo-controllable oxygen desorption behavior.
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