Lattice structures have drawn considerable attention due to their superior mechanical properties. However, the existing fabrication methods for lattice structures require complex procedures, as they have low material utilization and lead to unreliable node connections, which greatly restricts their application. In this work, wire arc additive manufacturing is used to fabricate large-scale lattice structures efficiently, without any air holes between rods and panels. The principle and the process of fabricating the rods were analyzed systematically. The influence of the two most important parameters, including heat input and preset layer height, is disclosed. Through optical microscopy, the microstructure of the fabricated steel rods is found to consist of dendritic austenite and skeletal ferrite. The tensile strength of the rods can reach 603 MPa, and their elongation reaches 77%. These experimental results demonstrated the feasibility of fabricating lattice structures using wire arc additive manufacturing.
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http://dx.doi.org/10.3390/ma13163482 | DOI Listing |
Adv Sci (Weinh)
January 2025
School of Resources and Environment, University of Electronic Science and Technology of China, Chengdu, 611731, China.
Heterojunctions, known for their decent separation of photo-generated electrons and holes, are promising for photocatalytic CO reduction. However, a significant obstacle in traditional post-assembled heterojunctions is the high interfacial barrier for charge transfer caused by atomic lattice mismatch at multiphase interfaces. Here, as research prototypes, the study creates a lattice-matched co-atomic interface within CsPbBr-CsPbBr polytypic nanocrystals (113-125 PNs) through the proposed in situ hybrid strategy to elucidate the underlying charge transfer mechanism within this unique interface.
View Article and Find Full Text PDFSci Adv
January 2025
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996, USA.
Light, strong, and radiation-tolerant materials are essential for advanced nuclear systems and aerospace applications. However, the comprehensive properties of current radiation-tolerant materials are far from being satisfactory in harsh operating environments. In this study, a high-throughput-designed NbVTaSi refractory eutectic medium entropy alloy realizes the controllable formation of the β-NbSi phase with a high content and has outstanding comprehensive properties, i.
View Article and Find Full Text PDFInorg Chem
January 2025
Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Material Science and Engineering, Shandong University, Jinan 250061, P. R. China.
In this work, CaWO (CWO) phosphors were successfully synthesized using a high-temperature solid-state method, exhibiting an anomalous far-red/near-infrared (FR-NIR) emission centered at 685 nm. The origin of this FR-NIR emission is confirmed through Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), density functional theory (DFT) calculations, and heterovalent cationic substitution (Y/Na → Ca). These analyses indicate that interstitial oxygen (O) defects within the lattice are primarily responsible for the FR-NIR emission.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Shanghai Engineering Research Centre of Ultra Precision Optical Manufacturing, Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
Developing switchable and multifunctional metasurfaces is essential for high-integration photonics. However, most previous studies encountered challenges such as limited degrees of freedom, simple tuning of predefined functionality, and complicated control systems. Here, we develop a general strategy to construct switchable and multifunctional metasurfaces.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland.
A Scanning Photoelectron Microscopy (SPEM) experiment has been applied to ZnO:N films deposited by Atomic Layer Deposition (ALD) under O-rich conditions and post-growth annealed in oxygen at 800 °C. spatial resolution (130 nm) allows for probing the electronic structure of single column of growth. The samples were cleaved under ultra-high vacuum (UHV) conditions to open atomically clean cross-sectional areas for SPEM experiment.
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