We theoretically investigate an controlled unidirectional reflectionlessness and near perfect absorption by applying external voltage in an electro-optical plasmonic waveguide system based on near-field coupling between two resonators. The system consists of two resonators side coupled to a metal-dielectric-metal plasmonic waveguide. Based on the numerical simulation, when external voltage is U = 7.4 V, the reflections for forward and backward directions are close to 0 and 0.82 at frequency 144.18 THz, while the reflections for forward and backward directions are close to 0.81 and 0 at frequency 150.86 THz when external voltage is U = 1.5 V. And the high absorption for forward (backward) direction is ∼0.97 (∼0.99) at frequency 144.18 THz (150.86 THz).
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Nanoscale
January 2025
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, 710049, China.
Two-dimensional (2D) organic-inorganic halide perovskites are promising sensitive materials for optoelectronic applications due to their strong light-matter interactions, layered structure, long carrier lifetime and diffusion length. However, a high gate bias is indispensable for perovskite-based phototransistors to optimize detection performances, since ion migration seriously screens the gate electric field and the deposition process introduces intrinsic defects, which induces severe leakages and large power dissipation. In this work, an ultrasensitive phototransistor based on the (PEA)SnI perovskite and the Al:HfO ferroelectric layer is meticulously studied, working without an external gate voltage.
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March 2025
Department of Biomolecular Sciences, School of Pharmacy, University of Mississippi, Oxford, MS, USA.
Voltage-gated sodium (Nav) channels are pivotal for cellular signaling, and mutations in Nav channels can lead to excitability disorders in cardiac, muscular, and neural tissues. A major cluster of pathological mutations localizes in the voltage-sensing domains (VSDs), resulting in either gain-of-function, loss-of-function effects, or both. However, the mechanism behind this functional diversity of mutations at equivalent positions remains elusive.
View Article and Find Full Text PDFLight Sci Appl
January 2025
Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004, Kaifeng, China.
Solution-processed quantum dot light-emitting diodes (QLEDs) hold great potential as competitive candidates for display and lighting applications. However, the serious energy disorder between the quantum dots (QDs) and hole transport layer (HTL) makes it challenging to achieve high-performance devices at lower voltage ranges. Here, we introduce "giant" fully alloy CdZnSe/ZnSeS core/shell QDs (size ~ 19 nm) as the emitting layer to build high-efficient and stable QLEDs.
View Article and Find Full Text PDFWearable Technol
December 2024
College of Engineering, University of Michigan, Ann Arbor, MI, USA.
Internal and external rotation of the shoulder is often challenging to quantify in the clinic. Existing technologies, such as motion capture, can be expensive or require significant time to setup, collect data, and process and analyze the data. Other methods may rely on surveys or analog tools, which are subject to interpretation.
View Article and Find Full Text PDFNanotechnology
January 2025
Xidian University, Xi'an 710071, China, Xi'an, Xian, Shaanxi, 710126, CHINA.
Anti-ambipolar transistors (AAT) are considered as a breakthrough technology in the field of electronics and optoelectronics, which is not only widely used in diverse logic circuits, but also crucial for the realization of high-performance photodetectors. The anti-ambipolar characteristics arising from the gate-tunable energy band structure can produce high-performance photodetection at different gate voltages. As a result, this places higher demands on the parametric driving range (ΔVg) and peak-to-valley ratio (PVR) of the AAT.
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