The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.
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| http://dx.doi.org/10.3390/nano10071404 | DOI Listing |
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