Thanks to their unique optical properties Ge-Sb-S-Se-Te amorphous chalcogenide materials and compounds offer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSbSSeTe chalcogenide thin films one can significantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic ellipsometry data collected on the as-deposited chalcogenide thin films is used to evaluate their linear and nonlinear properties. Moreover, Raman and Fourier-transform infrared spectroscopies permitted to get a description of their amorphous structure. For the purpose of applications, their thermal stability upon annealing is also evaluated. We demonstrate that depending on the GeSbSSeTe film composition a trade-off between a high transparency in near- or mid-infrared ranges, strong nonlinearity and good thermal stability can be found in order to use such materials for applications compatible with the standard CMOS integration processes of microelectronics and photonics.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7367863PMC
http://dx.doi.org/10.1038/s41598-020-67377-9DOI Listing

Publication Analysis

Top Keywords

chalcogenide thin
12
thin films
12
ge-sb-s-se-te amorphous
8
amorphous chalcogenide
8
optical properties
8
amorphous structure
8
linear nonlinear
8
thermal stability
8
chalcogenide
5
films on-chip
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!