Molybdenum oxide (MoO, < 3) has been successfully demonstrated as an efficient passivating hole-selective contact in crystalline Si (-Si) heterojunction solar cells because of its large bandgap (∼3.2 eV) and work function (∼6.9 eV). However, the severe performance degradation coming from the instability of the MoO and its interfaces has not been well addressed. In this work, we started with a -Si()/MoO heterojunction solar cell that yielded a power conversion efficiency () of 15.86%, in which the MoO film was synthesized by industry-compatible atomic layer deposition (ALD). The initial dropped to 10.20% after 2 days because of severe migration of O and Ag at the MoO/Ag interface. We solved this by the insertion of a CrO layer between the MoO layer and the Ag electrode. The solar cell was found to be stable for more than 8 months in air because of the suppression of interface degradation. Our work demonstrates an effective way of improving the stability of silicon solar cells with transition metal oxide carrier selective contacts.
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http://dx.doi.org/10.1021/acsami.0c09877 | DOI Listing |
Polymers (Basel)
January 2025
School of Materials Science and Engineering, Ocean University of China, Qingdao 266100, China.
In organic solar cells, the aggregation and crystallization of polymers are significant for bulk heterojunction. Blending with acceptor materials, polymer donor materials can adjust their aggregation by the movement of the chain segments. In this paper, the unfused structures based on thiophene and carbazole are respectively designed and introduced into the donor-acceptor copolymer donor materials to investigate the influence of flexible and rigid structures on polymer-aggregation leading photoelectric performance.
View Article and Find Full Text PDFMolecules
January 2025
School of Metallurgical and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China.
Isoindigo (IID)-based non-fullerene acceptors, known for their broad absorption spectra and high charge carrier mobilities, play a crucial role in organic photovoltaics. In this study, two A-DA'D-A type unfused ring acceptors (URAs), IDC8CP-IC and IDC6CP-IC, were designed and synthesized using cyclopentadithiophene (CPDT) and IID core units, each functionalized with different alkyl chains (2-hexyldecyl and 2-octyldodecyl), through an atom- and step-efficient direct C-H arylation (DACH) method. Both URAs, despite the absence of non-covalent conformation locking between CPDT and IID, demonstrated favorable molecular planarity, broad absorption ranges, low band gaps, and high molar absorption coefficients.
View Article and Find Full Text PDFJ Colloid Interface Sci
January 2025
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640 China; School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 China. Electronic address:
Indium nitride (InN) exhibited significant potential as a photoelectrode material for photoelectrochemical (PEC) water splitting, attributed to its superior light absorption, high electron mobility, and direct bandgap. However, its practical application was constrained by rapid carrier recombination occurring within the bulk and at the surface. To address these limitations, researchers developed InN/UiO-66 heterojunction photoelectrodes, which markedly enhanced PEC water splitting for hydrogen production.
View Article and Find Full Text PDFChemSusChem
January 2025
South China Agricultural University, College of Materials and Energy, 483 Wushan Road, 510642, Guangzhou, CHINA.
Hole transport layer (HTL)-free carbon-based perovskite solar cells (C-PSCs) own outstanding potential for commercial applications due to their attractive advantages of low cost and superior stability. However, the abundant defects and mismatched energy levels at the interface of the perovskite/carbon electrode severely limit the device efficiency and stability. Constructing a 2D layer on the surface of 3D perovskite films to form 2D/3D heterojunctions has been demonstrated to be an effective method of passivating surface defects and optimizing the energy level alignment in almost all kinds of PSCs.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Anhui Huasun Energy Company, Limited, Xuancheng 242000, China.
A rear emitter with a p-type boron-doped hydrogenated amorphous silicon/nanocrystalline silicon [a-Si:H(p)/nc-Si:H(p)] stack was prepared for the silicon heterojunction (SHJ) solar cell to improve its short-circuit current density (). CO plasma treatment (CO PT) was applied to a-Si:H(p) to facilitate the crystallization of the subsequently deposited nc-Si:H(p). To evaluate the effect of the CO PT, two different nc-Si:H(p) layers with low and high crystallinity (χ) were investigated.
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