In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FAMA)CsPbI (x = 0-0.1) is demonstrated to exhibit bipolar resistive switching behavior. The tri-cation organic-inorganic metal halide perovskite film was prepared by a one-step solution process in which the amount of Cs was varied to modify the property of FAMAPbI. It was found that the microstructure and defect properties of films are highly dependent on the contents of FA, MA, and Cs in the perovskite. The results found that 5% CsI doping is the optimized condition for improving the quality of FAMAPbI, forming a high quality tri-cation perovskite film with a smooth, uniform, stable and robust crystalline grain structure. The resistive switching on/off ratio of the (FAMA)CsPbI device is greater than 10 owing to the improved thin-film quality. Moreover, for the 5% CsI doped FAMAPbI films, the endurance and the stability of retention are better than the non-doped film. The improved microstructure and memory properties are attributed to the balance stress of FA/MA/Cs with different ionic size. It suggests the potential to achieve a desired resistive memory property of tri-cationic perovskite by carefully adjusting the cation ratios.
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| http://dx.doi.org/10.3390/nano10061155 | DOI Listing |
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