Based on a model of coupled processes with differently time-dependent decay kinetics we present a critical review on photoluminescence (PL) and transient absorption (TA) experiments in undoped and Mg or Fe-doped LiNbO, together with a comprehensive interpretation of visible radiative and parallel non-radiative decay processes on timescales ranging from 50 ns up to minutes. Analogies and peculiarities of the kinetics of mobile self-trapped and pinned excitons are investigated and compared with those of hopping polarons in the same system. Exciton hopping with an activation energy of ≈0.18 eV is shown to govern the lifetime and quenching of the short PL component above 100 K. Strong interaction between excitons and dipolar pinning defects explains the exorbitant lifetimes and large depinning energies characterizing delayed TA components in doped LiNbO, while restricted hopping of the pinned excitons is proposed to play a role in strongly delayed PL in LiNbO:Mg exhibiting a narrowed emission band due to locally reduced electron-phonon coupling. Atomistic models of pinned excitons are proposed corresponding to charge-compensated dipolar defects predicted by theories of dopant incorporation in LiNbOand are systematically assigned to absorption bands observed near the UV edge. Excitation in these bands is shown to lead directly to pinned exciton states confirming also the previously proposed two-step exciton-decay scenario in LiNbO:Fe. Weak intrinsic sub-80 ns luminescence in congruent LiNbOis explained as an opposite effect of enhanced electron-phonon coupling for excitons pinned on Nbantisite defects. The comparison of the different observed stretching behaviors in the paradigmatic system LiNbOprovides an intuitive picture of the underlying physical processes. The findings are relevant not only for holographic and non-linear optical applications of LiNbObut are of general interest also for the treatment of stretched exponential or other time-dependent kinetics in complex condensed systems ranging from nanocrystals and polymers to liquids and biophysical systems.
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http://dx.doi.org/10.1088/1361-648X/ab9c5b | DOI Listing |
Phys Chem Chem Phys
January 2025
Jiangxi Provincial Key Laboratory of Advanced Electronic Materials and Devices, Jiangxi Science & Technology Normal University, Nanchang 330018, China.
Owing to their high light absorption coefficient, excellent electronic mobility, and enhanced excitonic effect, two-dimensional (2D) GaN materials hold great potential for applications in optoelectronic and electronic devices. As the metal-semiconductor junction (MSJ) is a fundamental component of semiconductor-based devices, identifying a suitable metal for contacting semiconductors is essential. In this work, detailed first-principles calculations were performed to investigate the contact behavior between the GaN monolayer (ML) and a series of 2D metals MX (M = Nb, Ta, V, Mo, or W; X = S or Se).
View Article and Find Full Text PDFJ Phys Chem Lett
July 2024
Suzhou Key Laboratory of Novel Semiconductor-optoelectronics Materials and Devices, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, Jiangsu, China.
The existing methods to improve the charge balance of quantum dot light-emitting diodes (QLEDs) rely on energy-level matching, but these approaches have been limited by material availability and Fermi-level pinning. Here, we propose a solution that does not require changes to the materials' electronic properties. By using nanoimprinting technology to texture the interface between the hole-transporting layer (HTL) and colloidal quantum dot (CQD) layer, we can increase the HTL-CQD contact area.
View Article and Find Full Text PDFJ Chem Phys
May 2024
Institute of Physics, 46 Nauky Ave., Kyiv 03028, Ukraine.
Interaction between a fixed point electric charge Q and a freely rotating point electric dipole with the magnitude P pinned near a plane interface between two dispersionless insulators with different dielectric permittivities ɛ1 and ɛ2 has been considered. It was shown that, as a result of this interaction and the interaction of the dipole with the polarization charges induced at the interface by the charge Q and the dipole itself, there arise regions where the dipole can possess either one or two equilibrium orientations. The spatial distributions of the electrostatic dipole energy Wtotal under the combined action of the charge Q and the induced interface polarization charges, as well as the equilibrium dipole orientations (orientation maps), the boundaries between the regions with different numbers of dipole orientations, and their evolution with the variation of problem parameters (the charge and dipole magnitudes, the mismatch between ɛ1 and ɛ2, and the charge-interface distance) were calculated.
View Article and Find Full Text PDFNat Commun
April 2024
Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.
Two-dimensional organic-inorganic hybrid halide perovskites possess diverse structural polymorphs with versatile physical properties, which can be controlled by order-disorder transition of the spacer cation, making them attractive for constructing semiconductor homojunctions. Here, we demonstrate a space-cation-dopant-induced phase stabilization approach to creating a lateral homojunction composed of ordered and disordered phases within a two-dimensional perovskite. By doping a small quantity of pentylammonium into (butylammonium)PbI or vice versa, we effectively suppress the ordering transition of the spacer cation and the associated out-of-plane octahedral tilting in the inorganic framework, resulting in phase pining of the disordered phase when decreasing temperature or increasing pressure.
View Article and Find Full Text PDFAdv Sci (Weinh)
January 2024
Department of Physics, California Institute of Technology, Pasadena, CA, 91125, USA.
Monolayer ternary tellurides based on alloying different transition metal dichalcogenides (TMDs) can result in new two-dimensional (2D) materials ranging from semiconductors to metals and superconductors with tunable optical and electrical properties. Semiconducting WTe S monolayer possesses two inequivalent valleys in the Brillouin zone, each valley coupling selectively with circularly polarized light (CPL). The degree of valley polarization (DVP) under the excitation of CPL represents the purity of valley polarized photoluminescence (PL), a critical parameter for opto-valleytronic applications.
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