Tunable thermal expansion coefficient of transition-metal dichalcogenide lateral heterostructures.

Nanotechnology

Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai Institute of Applied Mathematics and Mechanics, School of Mechanics and Engineering Science, Shanghai University, Shanghai 200072, People's Republic of China.

Published: October 2020

The thermal expansion effect plays an important role in governing the thermal stability or the stable configuration of quasi-two-dimensional atomic layers, where the difference between the thermal expansion coefficient of different kinds of atomic layer in lateral heterostructure may cause strong thermal rippling of the atomic layer. We investigate the thermal expansion phenomenon in the WSe-MoS lateral heterostructure. We find that the thermal expansion coefficient can be enhanced by more than a factor of two via varying the ratio between the WSe and MoS components in the heterostructure. The underlying mechanism is disclosed to be the buckling of the WSe region that is induced by the misfit strain at the coherent interface between WSe and MoS. These findings shall be helpful in handling the thermal stability of functional devices based on the transition-metal dichalcogenide lateral heterostructures and other similar quasi-two-dimensional lateral heterostructures.

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http://dx.doi.org/10.1088/1361-6528/ab9b48DOI Listing

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