Intercalation-Induced Disintegrated Layer-By-Layer Growth of Ultrathin Ternary Mo(TeS) Plates.

ACS Appl Mater Interfaces

School of Mechanical and Mining Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.

Published: July 2020

AI Article Synopsis

  • Nanometer-thick transition-metal dichalcogenides (TMDs) are gaining attention for their unique properties, but synthesizing them in large quantities is challenging.
  • The study successfully synthesizes high-yield, single-crystalline Mo(TeS) plates using a simple chemical vapor deposition method, altering precursor materials to enhance product variations.
  • The research highlights the significant role of sulfur forms in the growth process and suggests that understanding these interactions can lead to improved production methods for TMDs, crucial for their application in devices.

Article Abstract

Nanometer-thick transition-metal dichalcogenides (TMDs) have attracted increasing research interest because of their exotic physical properties, but their high-yield and large-scale synthesis remains a challenge for their practical device applications. In this study, we realize the high-yield synthesis of nanometer-thick single-crystalline Mo(TeS) plates by a facile chemical vapor deposition method. Adding S powders in the precursors can result in the products varying from well-faceted MoTe hexagonal plates to irregular Mo(TeS) plates with randomly stacked nanometer-thick layer steps. Moreover, their lateral dimension increases from several μm for binary MoTe to several tens of μm for ternary Mo(TeS). More interestingly, such irregular Mo(TeS) plates can form few layers by ultrasonic exfoliation. Our detailed electron microscopy analyses show that three kinds of S forms influence the ternary growth. In particular, elemental S intercalations play an important role in the growth and exfoliation of ultrathin Mo(TeS) plates. This study enriches the fundamental understanding of zero-valent intercalation in TMDs and provides a new insight into secure high-yield nanometer-thick TMDs, which is critical for practical applications.

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Source
http://dx.doi.org/10.1021/acsami.0c07342DOI Listing

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