We report recent advances in absolute x-ray wavelength metrology in the context of producing modern standard reference data. Primary x-ray wavelength standards are produced today using diffraction spectrometers using crystal optics arranged to be operated in dispersive and non-dispersive geometries, giving natural-line-width limited profiles with high resolution and accuracy. With current developments, measurement results can be made traceable to the definition of the meter by using diffraction crystals that have absolute lattice-spacing provenance through x-ray-optical interferometry. Recent advances in goniometry, innovation of electronic x-ray area detectors, and new alignment and measurement methods now permit robust measurement and quantification of previously-elusive systematic uncertainties. This capability supports infrastructures like the NIST Standard Reference Data programs and the International Initiative on X-ray Fundamental Parameters and their contributions to science and industry. Such data projects are further served by employing complementary wavelength-and energy-dispersive spectroscopic techniques. This combination can provide, among other things, new tabulations of less-intense x-ray lines that need to be identified in x-ray fluorescence investigation of uncharacterized analytes. After delineating the traceability chain for primary x-ray wavelength standards, and NIST efforts to produce standard reference data and materials in particular, this paper posits the new opportunities for x-ray reference data tabulation that modern methods now afford.
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http://dx.doi.org/10.1016/j.radphyschem.2019.108392 | DOI Listing |
PLoS One
January 2025
Physiotherapy Programme & Center for Healthy Aging and Wellness (H-CARE), Faculty of Health Sciences, Universiti Kebangsaan Malaysia, Kuala Lumpur, Malaysia.
Background: Photobiomodulation, specifically high-energy photobiomodulation therapy (H-PBMT), is gaining recognition as a promising non-invasive intervention for managing knee osteoarthritis (KOA). While H-PBMT has demonstrated effectiveness in reducing pain and improving physical function, most evidence to date focuses on short-term symptomatic relief. The potential for H-PBMT to offer sustained benefits and modify the underlying progression of KOA remains insufficiently explored, warranting further investigation.
View Article and Find Full Text PDFRSC Adv
January 2025
Institute of Polymer and Dye Technology, Lodz University of Technology Stefanowskiego 16 Lodz 90537 Poland.
This study investigates the structure-property relationships of a series of phenylhydrazones bearing various electron-donating and electron-withdrawing substituents, such as methoxy, dimethylamino, morpholinyl, hydroxyl, chloro, bromo, and nitro groups. The compounds were synthesized, and their structures were characterized using single-crystal X-ray diffraction, powder X-ray diffraction, FTIR spectroscopy, NMR spectroscopy, and DSC. Three-dimensional excitation-emission matrix (3D-EEM) fluorescence spectroscopy and UV-Vis spectroscopy were employed to elucidate the complex interplay between the molecular skeleton, substituents, and the resulting photophysical properties.
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January 2025
Department of Physics, Government General Degree College Gopiballavpur-II, Jhargram 721517, India.
Effective engineering of nanostructured materials provides a scope to explore the underlying photoelectric phenomenon completely. A simple cost-effective chemical reduction route is taken to grow nanoparticles of Cd Zn S with varying = 1, 0.7, 0.
View Article and Find Full Text PDFPLoS One
January 2025
College of Physics and Electronic Engineering, Hainan Normal University, HaiKou, China.
We have successfully prepared a significant number of nanowires from non-toxic silicon sources. Compared to the SiO silicon source used in most other articles, our preparation method is much safer. It provides a simple and harmless new preparation method for the preparation of silicon nanowires.
View Article and Find Full Text PDFNanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
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