By utilizing the radio-frequency metal-oxide-semiconductor field-effect transistor switch, the multi-stage stacked printed circuit board Blumlein lines, and the induction voltage adder, a voltage generator with MHz repetition rates and nanosecond duration was designed and fabricated. The shunting current of the multi-stage stacked Blumlein lines, which consists of the coupling current at the load ends and the leakage current at the switch ends, is clarified. The circuit simulation and experiment of the three-stage stacked Blumlein lines are carried out; the result shows that the experiment and simulation agree well. The five-stage IVA prototype is designed for generating voltage pulses of ∼10 kV in amplitude and 8-11 ns in duration with MHz burst repetition rates. The voltage generator with MHz repetition rates and nanosecond duration demonstrated an important application prospect to reduce the electron beam initial emittance of the high energy accelerator.
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http://dx.doi.org/10.1063/1.5143580 | DOI Listing |
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