High-Mobility InO:H Electrodes for Four-Terminal Perovskite/CuInSe Tandem Solar Cells.

ACS Nano

Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.

Published: June 2020

AI Article Synopsis

  • Researchers developed a new process for creating InO:H (IO:H) films that achieve high mobility and crystallization, optimizing gas flows during deposition.
  • The resulting highly crystallized IO:H film, used as a front electrode in perovskite solar cells, reached 17.3% power conversion efficiency and 82% average transmittance in the NIR range.
  • The study demonstrated that using less conventional IO:H films can significantly enhance performance in tandem solar cells, surpassing traditional indium-doped zinc oxide electrodes.

Article Abstract

Four-terminal (4-T) tandem solar cells (.., perovskite/CuInSe (CIS)) rely on three transparent conductive oxide electrodes with high mobility and low free carrier absorption in the near-infrared (NIR) region. In this work, a reproducible InO:H (IO:H) film deposition process is developed by independently controlling H and O gas flows during magnetron sputtering, yielding a high mobility value up to 129 cm V s in highly crystallized IO:H films annealed at 230 °C. Optimization of H and O partial pressures further decreases the crystallization temperature to 130 °C. By using a highly crystallized IO:H film as the front electrode in NIR-transparent perovskite solar cell (PSC), a 17.3% steady-state power conversion efficiency and an 82% average transmittance between 820 and 1300 nm are achieved. In combination with an 18.1% CIS solar cell, a 24.6% perovskite/CIS tandem device in 4-T configuration is demonstrated. Optical analysis suggests that an amorphous IO:H film (without postannealing) and a partially crystallized IO:H film (postannealed at 150 °C), when used as a rear electrode in a NIR-transparent PSC and a front electrode in a CIS solar cell, respectively, can outperform the widely used indium-doped zinc oxide (IZO) electrodes, leading to a 1.38 mA/cm short-circuit current () gain in the bottom CIS cell of 4-T tandems.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7315637PMC
http://dx.doi.org/10.1021/acsnano.0c03265DOI Listing

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