The recent discovery of the ability to perform direct epitaxial growth of graphene layers on semiconductor Ge surfaces led to a huge interest in this topic. One of the reasons for this interest is the chance to overcome several present-day drawbacks on the method of graphene integration in modern semiconductor technology. The other one is connected with the fundamental studies of the new graphene-semiconductor interfaces that might help with the deeper understanding of mechanisms, which governs graphene growth on different substrates as well as shedding light on the interaction of graphene with these substrates, whose range is now spread from metals to insulators. The present minireview gives a timely overview of the state-of-the-art field of studies of the graphene-Ge epitaxial interfaces and draws some conclusions in this research area.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1039/d0nr00185f | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Cold Seeded Epitaxy and Flexomagnetism in GdAuGe Membranes Exfoliated From Graphene/Ge(111).
Nano Lett
August 2024
Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States of America.
Remote and van der Waals epitaxy are promising approaches for synthesizing single crystalline membranes for flexible electronics and discovery of new properties via extreme strain; however, a fundamental challenge is that most materials do not wet the graphene surface. We develop a cold seed approach for synthesizing smooth intermetallic films on graphene that can be exfoliated to form few nanometer thick single crystalline membranes. Our seeded GdAuGe films have narrow X-ray rocking curve widths of 9-24 arc seconds, which is 2 orders of magnitude lower than their counterparts grown by typical high temperature methods, and have atomically sharp interfaces observed by transmission electron microscopy.
View Article and Find Full Text PDFRealization of a New Graphene-Ferromagnet Interface with Dirac Linear Band Dispersion.
ACS Appl Mater Interfaces
May 2023
Department of Physics, Shanghai University, 99 Shangda Road, 200444 Shanghai, China.
Article Synopsis
- The integration of graphene with ferromagnetic materials like MnGe enhances spin injection, crucial for spintronics applications.
- Recent experiments successfully created graphene/ferromagnetic-MnGe/semiconducting-Ge heterostructures, maintaining essential linear energy characteristics for charge carriers near the Fermi level.
- These findings indicate promising potential for graphene's role in future semiconductor technology, particularly in spintronics device development.
Highly heterogeneous epitaxy of flexoelectric BaTiO membrane on Ge.
Nat Commun
May 2022
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering & The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China.
Article Synopsis
- Integration of complex oxides on silicon, germanium, and flexible substrates is crucial for advanced devices in information technology.
- The study showcases successful remote epitaxy of BaTiO (BTO) on germanium using a graphene layer, dependent on the surface orientation of Ge.
- The resulting BTO films exhibit superior flexoelectric properties and can be easily transferred to various substrates, enhancing potential device applications.
In-Situ Transmission Electron Microscopy Observation of Germanium Growth on Freestanding Graphene: Unfolding Mechanism of 3D Crystal Growth During Van der Waals Epitaxy.
Small
February 2022
Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Québec, J1K OA5, Canada.
Breakthroughs in cutting-edge research fields such as hetero-integration of materials and the development of quantum devices are heavily bound to the control of misfit strain during heteroepitaxy. While remote epitaxy offers one of the most intriguing avenues, demonstrations of functional hybrid heterostructures are hardly possible without a deep understanding of the nucleation and growth kinetics of 3D crystals on graphene and their mutual interactions. Here, the kinetics of such processes from real-time observations of germanium (Ge) growth on freestanding single layer graphene (SLG) using in-situ transmission electron microscopy are unraveled.
View Article and Find Full Text PDFQuantifying Mn Diffusion through Transferred versus Directly Grown Graphene Barriers.
ACS Appl Mater Interfaces
September 2021
Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, United States.
We quantify the mechanisms for manganese (Mn) diffusion through graphene in Mn/graphene/Ge (001) and Mn/graphene/GaAs (001) heterostructures for samples prepared by graphene layer transfer versus graphene growth directly on the semiconductor substrate. These heterostructures are important for applications in spintronics; however, challenges in synthesizing graphene directly on technologically important substrates such as GaAs necessitate layer transfer and annealing steps, which introduce defects into the graphene. photoemission spectroscopy measurements reveal that Mn diffusion through graphene grown directly on a Ge (001) substrate is 1000 times lower than Mn diffusion into samples without graphene ( ∼ 4 × 10 cm/s, ∼ 5 × 10 cm/s at 500 °C).
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!