AI Article Synopsis
- Room-temperature antiferromagnetic spintronic devices struggle with low signal read-out due to limited anisotropic magnetoresistance in antiferromagnets.
- The study demonstrates using giant piezoelectric strain modulation and anomalous Hall resistance in a noncollinear antiferromagnetic material (Mn Ga) to potentially enhance signal detection.
- Tunnel-junction devices were developed with a small diameter, achieving over 10% tunneling resistance ratio at room temperature, indicating promising applications for noncollinear antiferromagnets in high-performance spintronic technologies.
Article Abstract
One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel-junction devices based on effective manipulation of antiferromagnetic spins. In this work, the giant piezoelectric strain modulation of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal-D0 hexagonal Mn Ga-is demonstrated. Furthermore, tunnel-junction devices are built with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications.
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| http://dx.doi.org/10.1002/adma.202002300 | DOI Listing |
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