We investigate the photovoltaic performance of solar cells based on n-AlInN (x = 0-0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlInN layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (≈10-1 Ω·cm) while the residual carrier concentration drops from ~10 to ~10 cm. As a result, the top n-contact resistance varies from ≈10 to 1 MΩ for InN to AlInN-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivity.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7287894 | PMC |
| http://dx.doi.org/10.3390/ma13102336 | DOI Listing |
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