In this article, we show how relativistic α-stable processes can be used to explain quasiballistic heat conduction in semiconductors. This is a method that can fit experimental results of ultrafast laser heating in alloys. It also provides a connection to a rich literature on the Feynman-Kac formalism and random processes that transition from a stable Lévy process on short time and length scales to the Brownian motion at larger scales. This transition was captured by a heuristic truncated Lévy distribution in earlier papers. The rigorous Feynman-Kac approach is used to derive sharp bounds for the transition kernel. Future directions are briefly discussed.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevE.101.042110DOI Listing

Publication Analysis

Top Keywords

quasiballistic heat
8
heat conduction
8
conduction semiconductors
8
relativistic stable
4
stable processes
4
processes quasiballistic
4
semiconductors article
4
article relativistic
4
relativistic α-stable
4
α-stable processes
4

Similar Publications

Nanostructured semiconductors promise functional thermal management for microelectronics and thermoelectrics through a rich design capability. However, experimental studies on anisotropic in-plane thermal conduction remain limited, despite the demand for directional heat dissipation. Here, inspired by an oriental wave pattern, a periodic network of bent wires, we investigate anisotropic in-plane thermal conduction in nanoscale silicon phononic crystals with the thermally dead volume.

View Article and Find Full Text PDF

Nonmonotonic heat dissipation phenomenon in close-packed hotspot systems.

Phys Rev E

July 2022

Department of Mechanics and Aerospace Engineering, Southern University of Science and Technology, Shenzhen 518055, China.

Transient heat dissipation in close-packed quasi-two-dimensional nanoline and three-dimensional nanocuboid hotspot systems is studied based on the phonon Boltzmann transport equation. It is found that, counterintuitively, the heat dissipation efficiency is not a monotonic function of the distance between adjacent nanoscale heat sources but reaches the highest value when this distance is comparable to the phonon mean free path. This is due to the competition of two thermal transport processes: quasiballistic transport when phonons escape from the nanoscale heat source and the scattering among phonons originating from the adjacent nanoscale heat source.

View Article and Find Full Text PDF

We investigate the unsteady heat (energy) transport in an infinite mass-in-mass chain with a given initial temperature profile. The chain consists of two sublattices: the β-Fermi-Pasta-Ulam-Tsingou (FPUT) chain and oscillators (of a different mass) connected to each FPUT particle. Initial conditions are such that initial kinetic temperatures of the FPUT particles and the oscillators are equal.

View Article and Find Full Text PDF

Engineering Thermal Transport across Layered Graphene-MoS Superlattices.

ACS Nano

December 2021

Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.

Layering two-dimensional van der Waals materials provides a high degree of control over atomic placement, which could enable tailoring of vibrational spectra and heat flow at the sub-nanometer scale. Here, using spatially resolved ultrafast thermoreflectance and spectroscopy, we uncover the design rules governing cross-plane heat transport in superlattices assembled from monolayers of graphene (G) and MoS (M). Using a combinatorial experimental approach, we probe nine different stacking sequences, G, GG, MG, GGG, GMG, GGMG, GMGG, GMMG, and GMGMG, and identify the effects of vibrational mismatch, interlayer adhesion, and junction asymmetry on thermal transport.

View Article and Find Full Text PDF

A Parametric Study of the Effects of Critical Design Parameters on the Performance of Nanoscale Silicon Devices.

Nanomaterials (Basel)

October 2020

Department of Mechanical Engineering, College of Electrical and Mechanical Engineering, National University of Sciences and Technology, Islamabad 44000, Pakistan.

Article Synopsis
  • - The electronics industry is focusing on miniaturizing solid-state devices to meet future tech needs, leading to changes in how electrical carriers move within these tiny devices as they shrink below 10 nm in size.
  • - A Monte Carlo model was used to study how factors like voltage, channel length, and electrode conditions affect the performance of nanoscale silicon devices, revealing that shorter channels produce less heat due to decreased carrier scattering.
  • - The study found that while heat generation rises with stronger electric fields, it remains fairly stable with temperature increases, highlighting that drain contacts are crucial for optimal device efficiency.
View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!