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Fabrication of Microbolometer Arrays Based on Polymorphous Silicon-Germanium. | LitMetric

AI Article Synopsis

  • Developed arrays of infrared sensors (microbolometers) using a unique hydrogenated polymorphous silicon-germanium alloy (pm-SiGe:H) with impressive resistance characteristics.
  • Utilized plasma-enhanced chemical vapor deposition (PECVD) at 200 °C to create thermosensing films for devices sized at 50 × 50 μm with a high fill factor of 81%.
  • Conducted electrical characterization on a 19 × 20 microbolometer array, achieving notable voltage responsivity, detectivity, and demonstrating effective response to infrared radiation at room temperature.

Article Abstract

This work reports the development of arrays of infrared sensors (microbolometers) using a hydrogenated polymorphous silicon-germanium alloy (pm-SiGe:H). Basically, polymorphous semiconductors consist of an amorphous semiconductor matrix with embedded nanocrystals of about 2-3 nm. The pm-SiGe:H alloy studied has a high temperature coefficient of resistance (TCR) of 4.08%/K and conductivity of 1.5 × 10 S∙cm. Deposition of thermosensing film was made by plasma-enhanced chemical vapor deposition (PECVD) at 200 °C, while the area of the devices is 50 × 50 μm with a fill factor of 81%. Finally, an array of 19 × 20 microbolometers was packaged for electrical characterization. Voltage responsivity values were obtained in the range of 4 × 10 V/W and detectivity around 2 × 10 cm∙Hz/W with a polarization current of 70 μA at a chopper frequency of 30 Hz. A minimum value of 2 × 10 W/Hz noise equivalent power was obtained at room temperature. In addition, it was found that all the tested devices responded to incident infrared radiation, proving that the structure and mechanical stability are excellent.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7273222PMC
http://dx.doi.org/10.3390/s20092716DOI Listing

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