The electrochemical reduction of CO is promising for mitigating anthropogenic greenhouse gas emissions; however, voltage instabilities currently inhibit reaching high current densities that are prerequisite for commercialization. Here, for the first time, we elucidate that product gaseous bubble accumulation on the electrode/electrolyte interface is the direct cause of the voltage instability in CO electrolyzers. Although bubble formation in water electrolyzers has been extensively studied, we identified that voltage instability caused by bubble formation is unique to CO electrolyzers. The appearance of syngas bubbles within the electrolyte at the gas diffusion electrode (GDE)-electrolyte chamber interface (i.e. ∼10% bubble coverage of the GDE surface) was accompanied by voltage oscillations of 60 mV. The presence of syngas in the electrolyte chamber physically inhibited two-phase reaction interfaces, thereby resulting in unstable cell performance. The strategic incorporation of our insights on bubble growth behavior and voltage instability is vital for designing commercially relevant CO electrolyzers.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7214942 | PMC |
http://dx.doi.org/10.1016/j.isci.2020.101094 | DOI Listing |
Chem Commun (Camb)
January 2025
College of Energy, Xiamen University, 361005, Xiamen, China.
Pushing the limit of the charging cut-off voltage inevitably leads to the instability of bulk and interfacial structures. Herein, one-step dual-modified LiCoO (LCO) is achieved by thermodynamic decomposition of lithiuim salts on the surface, featuring F-doped bulk and LiF & LiBO coating layers. Notably, such artificial near-surface reconfiguration effectively suppresses Co dissolution, structural deconstruction and electrolyte side reactions during repeated lithiation/delithiation processes.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
As a leading candidate for high-voltage, cobalt-free cathodes, spinel LiNiMnO (LNMO) oxide is highly attractive for next-generation lithium-ion batteries. However, the instability of cation-oxygen bonds (especially Mn-O) and the adverse two-phase transition of LNMO result in rapid crystal collapse during cycling, thus limiting its practical deployment. To address these issues, herein we exploit the differences in miscibility between dopants and the spinel matrix to embed high-entropy doped microregions (HEDRs, 5-15 nm in size) within the spinel.
View Article and Find Full Text PDFJ Colloid Interface Sci
December 2024
College of Materials Science and Engineering, Nanjing Tech University, Nanjing, Jiangsu 211816, China; Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China. Electronic address:
Sodium metal is heralded as a premier anode candidate poised to supplant lithium in next-generation rechargeable batteries due to its abundant availability, cost-effectiveness, and superior energy density. Due to the highly reactive nature of metallic sodium, an unstable solid electrolyte interphase (SEI) forms spontaneously on the Na metal anode. This instability leads to non-uniform sodium deposition during cycling, promoting dendrite growth and the accumulation of "dead" sodium.
View Article and Find Full Text PDFSci Rep
January 2025
Department of Electrical Engineering, College of Engineering, Taif University, Taif, 21944, Saudi Arabia.
This article proposes a novel dual-loop control (DLC) method with a Tilt Integral Derivative (TID) Controller for output voltage regulation and inductor current regulation in a boost converter. The TID controller is designed with the aid of swarm inspired algorithms, particularly Artificial Bee Colony (ABC) and Salp Swarm Optimization (SSO). The TID Controller is a robust, and feedback type of controller and belongs to the family of fractional order controllers.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
The trapping mechanism at the AlGaN/GaN interface in the p-GaN high electron mobility transistors (HEMTs) and its impact on the turn-on characteristics of direct-coupled FET logic (DCFL) inverters were investigated across various supply voltages () and test frequencies (). The frequency-conductance method identified two trap states at the AlGaN/GaN interface (trap activation energy - ranges from 0.345 eV to 0.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!