SnTe has attracted considerable attention as an environmentally friendly thermoelectric material. The thermoelectric figure of merit ZT value is related to low thermal conductivity that can be successfully realized using fabrication of nanostructures. However, the practical realization of SnTe nanostructured composites is often limited by long reaction time, low yield, and aggregation of nanoparticles. Herein, a simple substitution reaction between CuSe and SnTe was adopted to realize CuTe-SnTe nanocomposites with unique all-scale hierarchical structures. On the atomic level, the substitution Se is introduced into the lattice via the reaction between CuSe and SnTe; on the nanoscopic level, CuTe nanoinclusions with 10 nm size are evenly distributed at the grain boundaries of SnTe with average grain size less than 1 μm; on the mesoscopic level, these SnTe grains stack up to larger particles (10-20 μm), which are further surrounded by CuTe grains with a predominant size of 1-2 μm. These hierarchical structures, together with additional SnTe stacking faults, can effectively scatter phonons with different wavelengths to reduce the lattice thermal conductivity. At 873 K, a thermal conductivity value of 0.49 W·m·K was obtained in the SnTe nanocomposite sample with 0.057 CuTe molar content, which is 40% lower than that of the pristine SnTe. By using the same approach for scattering phonons across integrated length scales, a value of 1.02 (∼80% enhancement, compared with that of the pristine SnTe) was achieved at 873 K for the sample of the SnTe nanocomposite with 0.034 CuTe molar content. This large increase in values highlights the role of multiscale hierarchical architecture in controlling phonon scattering, offering a viable alternative to realize higher performance thermoelectric bulk materials.
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http://dx.doi.org/10.1021/acsami.0c03349 | DOI Listing |
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December 2024
College of Materials Science and Engineering, Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, Guangdong Research Center for Interfacial Engineering of Functional Materials, Institute of Deep Underground Sciences and Green Energy, Shenzhen University, Shenzhen, 518060, P. R. China.
The development of high-performance n-type PbTe thermoelectric (TE) modules is urgently needed to match those p-type IV-VI tellurides (i.e., PbTe, GeTe, SnTe) with high figure of merit (ZT) to obtain multi-pair TE devices for practical applications.
View Article and Find Full Text PDFJ Am Chem Soc
December 2024
Department of Chemistry, University of Georgia, Athens, Georgia 30602, United States.
The synthesis of new hybrid halide materials is attracting increasing research interest due to their potential optoelectronic applications. However, general design principles that explain and predict their properties are still limited. In this work, we attempted to reveal the role of intermolecular interactions on the optical properties in a series of hybrid halides with an (EtNH)SnTeCl ( = 1-4) composition.
View Article and Find Full Text PDFSmall
November 2024
Department of Materials Science and Metallurgical Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu, 41566, Republic of Korea.
Adv Sci (Weinh)
November 2024
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China.
Molecules
October 2024
Key Laboratory of Spin Electron and Nanomaterials of Anhui Higher Education Institutes, Suzhou University, Suzhou 234000, China.
SnTe has emerged as a non-toxic and environmentally friendly alternative to the high-performance thermoelectric material PbTe, attracting significant interest in sustainable energy applications. In our previous work, we successfully synthesized high-quality SnTe with reduced thermal conductivity under high-pressure conditions. Building on this, in this work, we introduced indium (In) doping to further decrease thermal conductivity under high pressure.
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