AI Article Synopsis
- Black phosphorus is being explored for optoelectronic applications, and doping it can enhance its performance.
- Researchers synthesized high-quality tellurium (Te)-doped black phosphorus crystals, confirming the 0.1% doping level using various analytical methods.
- The Te-doped black phosphorus field effect transistors exhibited significantly higher hole mobility (719 cm V/s) compared to undoped versions, showcasing improved performance and bipolar behavior.
Article Abstract
Black phosphorus has many potential applications in optoelectronic devices because of its unique properties. Adjusting its performance by doping is an important issue of research. In this paper, we synthesized high-quality Te-doped crystals by the chemical vapor transport method. Tellurium doping with an atomic ratio of 0.1% was confirmed by X-ray photoelectron spectroscopy, X-ray diffraction, and energy dispersive X-ray analysis. The performance of field effect transistors devices shows that the hole mobility of Te-doped black phosphorous (BP) is significantly improved compared with that of undoped-BP. The highest hole mobility at room temperature is 719 cm V s, and the electron mobility is 63 cm V s. Te-doped BP field effect transistors show an obvious bipolar behavior.
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| http://dx.doi.org/10.1088/1361-6528/ab8c08 | DOI Listing |
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