Unveiling the atomic defects and electronic structure of CuZnSnSeTe (x = 0 to 0.04) by X-ray absorption fine structure spectroscopy.

Phys Chem Chem Phys

Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China. and Rome International Center for Materials Science, Superstripes, RICMASS, Via deiSabelli 119A, I-00185 Roma, Italy.

Published: May 2020

The quaternary chalcogenides consisting of earth-abundant elements such as Cu2ZnSnSe4 (CZTSe) have promising electrical and optical properties prompting enormous technological interest. Understanding different types of defects including Cu/Zn ordering is believed to be the key point to tackle technological challenges such as a large open circuit voltage deficit in CZTSe. The Te doped Cu2.2Zn0.8SnSe4-xTex (x = 0.01-0.04) were investigated using X-ray absorption fine structure spectroscopy at the Cu, Zn, and Se K-edges as well as at the Te L3-edge. Cu at the zinc site with anti-site defects and oxygen interstitials are identified. The detailed electronic structure upon Te doping is studied, providing insights into the rich defect chemistry present in this compound.

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http://dx.doi.org/10.1039/d0cp01153cDOI Listing

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