We report a comprehensive investigation on stacking faults (SFs) in the 3C-SiC cross-section epilayer. 3C-SiC growth was performed in a horizontal hot-wall chemical vapour deposition (CVD) reactor. After the growth (85 microns thick), the silicon substrate was completely melted inside the CVD chamber, obtaining free-standing 4 inch wafers. A structural characterization and distribution of SFs was performed by μ-Raman spectroscopy and room-temperature μ-photoluminescence. Two kinds of SFs, 4H-like and 6H-like, were identified near the removed silicon interface. Each kind of SFs shows a characteristic photoluminescence emission of the 4H-SiC and 6H-SiC located at 393 and 425 nm, respectively. 4H-like and 6H-like SFs show different distribution along film thickness. The reported results were discussed in relation with the experimental data and theoretical models present in the literature.
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http://dx.doi.org/10.3390/ma13081837 | DOI Listing |
Science
January 2025
Center for Advancing Materials Performance from the Nanoscale (CAMP-Nano), Hysitron Applied Research Center in China (HARCC) and Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China.
Higher strength and higher ductility are desirable for structural materials. However, ultrastrong alloys inevitably show decreased strain-hardening capacity, limiting their uniform elongation. We present a supranano (<10 nanometers) and short-range ordering design for grain interiors and grain boundary regions, respectively, in fine-grained alloys based on vanadium, cobalt, and nickel, with additions of tungsten, copper, aluminum, and boron.
View Article and Find Full Text PDFMater Res Lett
October 2024
Mechanics & Materials Lab, Department of Mechanical and Process Engineering, ETH Zürich, Zürich, Switzerland.
Twinning significantly affects the deformation behavior of hexagonal close-packed Mg, so a thorough understanding of twin nucleation and growth mechanisms is required for enhancing the properties of Mg-based materials. The commonly observed tension twins have been traditionally linked to 〈c + a〉 dislocation dissociation, which results in zonal dislocations with large Burgers vectors several times that of a single twinning dislocation and some residual dislocations. Contrarily, our molecular dynamics simulations reveal twin nucleation from pyramidal II stacking faults through atomic shuffling without shear displacements.
View Article and Find Full Text PDFJ Am Chem Soc
January 2025
Zhejiang Key Laboratory of Excited-State Energy Conversion and Energy Storage, and Department of Chemistry, Zhejiang University, Hangzhou 310058, China.
Here, we demonstrate that monocrystalline (free of stacking faults) wurtzite CdSe nanocrystals with monodisperse size, shape (dots, rods, or wires), and facet structure are synthesized in both strongly confined and weakly confined size regimes. Considering the unique -axis of wurtzite CdSe, we introduce a new type of neutral ligand (e.g.
View Article and Find Full Text PDFNat Nanotechnol
January 2025
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Interfacial ferroelectricity emerges in non-centrosymmetric heterostructures consisting of non-polar van der Waals (vdW) layers. Ferroelectricity with concomitant Coulomb screening can switch topological currents or superconductivity and simulate synaptic response. So far, it has only been realized in bilayer graphene moiré superlattices, posing stringent requirements to constituent materials and twist angles.
View Article and Find Full Text PDFSmall
January 2025
Key Laboratory of Eco-chemical Engineering, International S&T Cooperation Foundation of Eco-chemical Engineering and Green Manufacture, College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China.
Crafting anisotropically epitaxial p-n heterostructures with Z-scheme charge transmission is a promising avenue toward excellent photocatalytic efficiency, yet the large lattice mismatch and diverse crystal growth habits between components have often arisen as a big challenge to this goal. Here, anisotropically epitaxial p-n heterostructures with 19.8% lattice mismatch are obtained via a dynamics-mediated seeded growth tactic under reaction temperature as low as 60 °C.
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