Two-dimensional (2D) antimony, so-called antimonene, can form antimonene oxide when exposed to air. We present different types of single- and few-layer antimony oxide structures, based on density functional theory (DFT) calculations. Depending on stoichiometry and bonding type, these novel 2D layers have different structural stability and electronic properties, ranging from topological insulators to semiconductors with direct and indirect band gaps between 2.0 and 4.9 eV. We discuss their vibrational properties and Raman spectra for experimental identification of the predicted structures.
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http://dx.doi.org/10.1103/PhysRevLett.124.126101 | DOI Listing |
ACS Appl Mater Interfaces
December 2024
School of Metallurgy and Environment, Central South University, Changsha 410083, China.
The susceptibility of bulk and exfoliated nanolayered arsenic to oxidation has been a significant obstacle limiting their widespread application and safe disposal. Here we report a controllable antimony-doped (Sb-doped) method via chemical vapor transport (CVT) with SnI as a transport agent to prepare the bulk arsenic. After 96 h of exposure to air, the oxygen content on the surface of Sb-doped arsenic with SnI is 67% lower compared to the undoped arsenic with SnI, and 89% lower than the control group (undoped arsenic without SnI).
View Article and Find Full Text PDFSmall
November 2024
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.
The remarkable potential of two-dimensional (2D) materials in sustaining Moore's law has sparked a research frenzy. Extensive efforts have been made in the research of utilizing 2D semiconductors as channel materials in field-effect transistors. However, the next generation of integrated devices requires the integration of gate dielectrics with wider bandgaps and higher dielectric constants.
View Article and Find Full Text PDFUltramicroscopy
December 2024
National Research University of Electron Technology (MIET), Zelenograd 124498, Moscow, Russia.
The structural studies of two-dimensional (2D) van der Waals heterostructures and understanding of their relationship with the orientation of crystalline substrates using transmission electron microscopy (TEM) presents a challenge in developing an easy-to-use plan-view specimen preparation technique. In this report, we introduce a simple approach for high-quality plan-view specimen preparation utilizing a dual beam system comprising focused ion beam and scanning electron microscopy. To protect the atomically thin 2D heterostructure during the preparation process, we employ an epoxy layer.
View Article and Find Full Text PDFChemosphere
October 2024
State Key Laboratory of Clean Energy Utilization, College of Energy Engineering, Zhejiang University, Hangzhou 310027, China.
Electrochemical ozone production (EOP) is a promising technology for the removal of contaminants in wastewater. However, traditional two-dimensional anodes for EOP are restricted by their reliance on substrates and limited surface area, thus exhibiting poor stability and efficiency. Herein, a novel three-dimensional Sb-SnO with Cu and Ni co-doped (3D CuNi-ATO) was synthesized via a facile pressing-sintering method without the Ti substrate.
View Article and Find Full Text PDFACS Nano
September 2024
Department of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea.
The relentless miniaturization inherent in complementary metal-oxide semiconductor technology has created challenges at the interface of two-dimensional (2D) materials and metal electrodes. These challenges, predominantly stemming from metal-induced gap states (MIGS) and Schottky barrier heights (SBHs), critically impede device performance. This work introduces an innovative implementation of damage-free SbTe topological van der Waals (T-vdW) contacts, representing an ultimate contact electrode for 2D materials.
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